HY030N06C2
Single N-Channel Enhancement Mode MOSFET
Feature
65V/100A
R
DS(ON)
= 2.4 mΩ(typ.)@V
GS
= 10V
R
DS(ON)
= 3.7 mΩ(typ.)@V
GS
= 4.5V
100% Avalanche Tested
Reliable and Rugged
Halogen- Free Devices Available
Pin1
Pin Description
D D D D
D D D D
S S S G
G S S S
PPAK5*6-8L
Applications
Hard switched and high frequency circuits
Power switching application
Uninterruptible power supply
Single N-Channel MOSFET
Ordering and Marking Information
Package Code
C2
C2: PPAK5*6-8L
Date Code
YYXXXLWW G
Assembly Material
G: Halogen- Free
HY030N06
YYXXXLWW G
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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1
V1.0
HY030N06C2
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(Tc=25° Unless Otherwise Noted)
C
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature Range
Storage Temperature Range
Source Current-Continuous(Body Diode)
Tc=25°
C
65
+20/-12
-55 to 150
-55 to 150
100
V
V
°
C
°
C
A
Mounted on Large Heat Sink
I
DM
I
D
Pulsed Drain Current *
Continuous Drain Current
Tc=25°
C
Tc=25°
C
Tc=100°
C
Tc=25°
C
P
D
R
JC
R
JA
E
AS
Note:
Maximum Power Dissipation
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
SinglePulsed-Avalanche Energy ***
L=0.1mH
Tc=100°
C
360
100
63.2
48
19.2
2.6
35
289.8
A
A
A
W
W
°
C/W
°
C/W
mJ
* Repetitive rating；pulse width limited by max.junction temperature.
** Surface mounted on FR-4 board.
*** Limited by T
J
max , starting T
J
=25°
, L =
0.1mH, R
G
=25Ω., V
GS
=10V.
C
Electrical Characteristics
(Tc =25° Unless Otherwise Noted)
C
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
Drain-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
V
GS=
0V
,I
DS
=250μA
Parameter
Test Conditions
HY030N06
Min
65
-
-
1
-
-
-
Typ.
-
-
-
1.6
-
2.4
3.7
Max
-
1
50
2.5
±100
2.8
4.5
Unit
V
μA
μA
V
nA
mΩ
mΩ
V
DS
=65V,V
GS
=0V
T
J
=125°
C
V
DS
=V
GS
, I
DS
=250μA
V
GS
=+20/-12V,V
DS
=0V
V
GS
=10V,I
DS
=20A
V
GS
=4.5V,I
DS
=20A
Diode Characteristics
V
SD
*
t
rr
Q
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=20A,V
GS
=0V
I
SD
=20A,dI
SD
/dt
=100A/μs
-
-
-
0.78
43
50
1.1
-
-
V
ns
nC
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2
V1.0
HY030N06C2
Electrical Characteristics (Cont.)
(Tc =25° Unless Otherwise Noted)
C
Symbol
Parameter
Test Conditions
HY030N06
Min
-
-
-
-
-
V
DD
=30V,R
G
=25
Ω,
I
DS
=10A,V
GS
=10V
-
-
-
-
-
-
Typ.
1.35
5270
2359
220
22
14
40
20
96
11.5
27.2
Max
-
-
-
-
-
-
-
-
-
-
-
nC
ns
pF
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Characteristics
V
DS
=50V, V
GS
=10V,
I
D
=20A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
GS
=0V
,
V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
Ω
Gate Charge
Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2%
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3
V1.0
HY030N06C2
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Power Dissipation (w)
I
D
-Drain Current(A)
Tc-Case Temperature(℃)
Voltage
Tc-Case Temperature(℃)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
I
D
-Drain Current(A)
Normalized Transient
Zθ jc
Voltage
Thermal
Impedance
V
DS
-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 6: Drain-Source On Resistance
Figure 5: Output Characteristics
R
DS(ON)
-ON-Resistance(mΩ)
V
DS
-Drain-Source Voltage (V)
I
D
-Drain Current(A)
Voltage
Voltage
I
D
-Drain Current(A)
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4
V1.0
HY030N06C2
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Normalized On-Resistance
Figure 8: Source-Drain Diode Forward
I
S
-Source Current (A)
Tj-Junction Temperature (℃)
Voltage
Voltage
V
SD
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
V
GS
-Gate-Source Voltage (V)
C-Capacitance(pF)
Voltage
V
DS
-Drain-Source Voltage (V)
Voltage
Q
G
-Gate Charge (nC)
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5
V1.0
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