HY1804D/U
N-Channel Enhancement Mode MOSFET
Features
•
40
V/80A,
R
DS(ON)
=4.0 m(typ.) @ V
GS
=10V
R
DS(ON)
=4.6 m(typ.) @ V
GS
=4.5 V
Pin Description
•
•
•
Avalanche Rated
Reliable and Rugged
Halogen Free and Green Devices Available
(RoHS Compliant)
GD
S
G
D
GD
S
S
TO-252-2L
TO-251-3L
TO-251-3S
Applications
Switching Application
Power Management for DC/DC
N-Channel MOSFET
Ordering and Marking Information
Package Code
HY1804
YYXXXJWW G
D
HY1804
U
HY1804
YYXXXJWW G
V
D: TO-252-2L
Date Code
YYXXX WW
U: TO-251-3L
V:TO-251-3S
YYXXXJWW G
Assembly Material
G:Halogen Free
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
Termi-Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-
Free require-ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improveme nts to
this pr-oduct and/or to this document at any time without notice.
1
V1.1
HY1804D/U
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DM
I
D
P
D
R
JC
R
JA
E
AS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
Parameter
Rating
40
±20
175
-55 to 175
80
320
**
80
54
62.5
31.2
2.4
110
L=0.3mH
340***
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
°C
°C
A
A
A
W
°C /W
°C /W
mJ
Mounted on Large Heat Sink
Pulsed Drain Current *
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Energy
Note： * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=32V
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Parameter
(T
C
= 25C Unless Otherwise Noted)
Test Conditions
HY1804
Min.
40
-
-
1.0
-
-
Typ.
-
-
-
2.0
-
4.0
4.6
-
-
-
0.8
50
74
Max.
-
1
30
3.0
±100
5.0
6.0
1.1
-
-
Unit
V
GS
=0V, I
DS
=250A
V
DS
=40V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250A
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=40A
V
GS
=4.5V, I
DS
=40A
I
SD
=40A, V
GS
=0V
I
DS
=40A, dl
SD
/dt=100A/s
V
A
V
nA
m
m
V
ns
nC
R
DS(ON)
*
Drain-Source On-state Resistance
Diode Characteristics
V
SD
*
t
rr
Q
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
V1.1
HY1804D/U
Electrical Characteristics (Cont.)
Symbol
Parameter
(T
C
= 25C Unless Otherwise Noted)
Test Conditions
HY1804
Min.
-
-
-
-
-
-
-
-
-
-
-
Typ.
2.8
4280
461
324
21
25
27
31
90
7.8
19
Max.
-
-
-
-
-
-
-
-
-
-
-
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=20V, R
G
= 4
,
I
DS
=40A, V
GS
=10V,
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
pF
ns
Gate Charge Characteristics
V
DS
=32V, V
GS
=10V,
I
DS
=40A
nC
Note * : Pulse test ; pulse width
300
s, duty cycle2%.
3
V1.1
HY1804D/U
Typical Operating Characteristics
Power Dissipation
120
100
100
Drain Current
80
60
40
I
D
- Drain Current (A)
o
60
P
tot
- Power (W)
40
20
20
0
T
C
=25 C
0
20
40
60
80 100 120 140 160 180 200
0
T
C
=25 C,V
G
=10V
0
20 40
60
80 100 120 140 160 180 200
o
T
c
- Case Temperature (°C)
400
T
c
- Case Temperature (°C)
Safe Operation Area
I
D
- Drain Current (A)
100
Rd
s(o
n)
Lim
it
100us
1ms
10
10ms
DC
1
0.1
0.1
T
C
=25 C
o
1
10
100
500
V
DS
- Drain - Source Voltage (V)
Thermal Transient Impedance
10
Normalized Effective Transient
1
0.2
0.1
Duty = 0.5
0.1
0.02
0.05
0.01
0.01
Single
Mounted on minimum pad
o
R
JA
: 110 C/W
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
4
V1.1
HY1804D/U
Typical Operating Characteristics (Cont.)
Output Characteristics
160
140
120
100
80
60
40
20
0
0
0.4
0.8
1.2
5V
4.5V
4V
1.6
2.0
5.5V
6V
V
GS
= 7,8,9,10V
9
8
7
6
5
4
3
2
1
0
20
40
60
80
100
V
GS
=10V
R
DS(ON)
- On - Resistance (m)
I
D
- Drain Current (A)
V
GS
=4.5V
V
DS
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
Drain-Source On Resistance
8
7
6
5
4
3
2
1
I
DS
=40A
1.8
1.6
Gate Threshold Voltage
I
DS
=250
A
R
DS(ON)
- On - Resistance (m)
Normalized Threshold Vlotage
0
2
4
6
8
10
12
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
0
25
50
75 100 125 150 175
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
5
V1.1
FPGA/CPLD
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