HY1908D/U/S
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
80V/90A,
R
DS(ON)
=7.8 mΩ (typ.) @ V
GS
=10V
Avalanche Rated
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
G
D
Pin Description
S
G
D
D
S
S
G
TO-252-2L
TO-251-3L
TO-251-3L
Applications
D
•
Power Management for Inverter Systems.
G
N-Channel MOSFET
S
Ordering and Marking Information
Package Code
ÿ
ÿ
ÿ
YYXXXJWW G YYXXXJWW G YYXXXJWW G
D
HY1908
U
HY1908
S
HY1908
D : TO-252-2L
S : TO-251-3L
Date Code
YYXXX WW
U : TO-251-3L
Assembly Material
G : Lead Free Device
HOOYI
lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS.
HOOYI
lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.
HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
Note:
advise customers to obtain the latest version of relevant information to verify before placing orders.
HOOYI
reserves the right to make changes to improve reliability or manufacturability without notice, and
1
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150709
HY1908D/U/S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DM
I
D
P
D
R
θJC
R
θJA
E
AS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulsed Drain Current *
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
T
C
=25°C
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
Parameter
Rating
80
±25
175
-55 to 175
90
315**
90
59
64
32
2.35
110
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
°C
°C
A
A
A
W
°C/W
Mounted on Large Heat Sink
Avalanche Ratings
Avalanche Energy, Single Pulsed
L=0.5mH
214***
mJ
Note： * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=64V
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
*
V
SD
*
t
rr
Q
rr
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Parameter
(T
C
= 25°C Unless Otherwise Noted)
Test Conditions
HY1908
Min.
Typ.
Max.
Unit
V
GS
=0V, I
DS
=250µA
V
DS
=80V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±25V, V
DS
=0V
V
GS
=10V, I
DS
=45A
I
SD
=45A, V
GS
=0V
I
SD
=45A, dl
SD
/dt=100A/µs
80
-
-
2
-
-
-
-
-
3
-
7.8
-
1
10
4
±100
9.0
V
µA
V
nA
mΩ
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
-
-
0.8
30
25
1.2
-
-
V
ns
nC
2
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HY1908D/U/S
Electrical Characteristics (Cont.)
Symbol
Parameter
(T
C
= 25°C Unless Otherwise Noted)
Test Conditions
HY1908
Min.
Typ.
Max.
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=40V, R
G
=6
Ω,
I
DS
=45A, V
GS
=10V,
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
-
-
-
-
-
-
-
-
1.2
3864
365
239
26
42
64
20
-
-
-
-
-
-
-
-
ns
pF
Ω
Gate Charge Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=64V, V
GS
=10V,
I
DS
=45A
-
-
-
84
16
26
-
-
-
nC
Note * : Pulse test ; pulse width
≤300
µ
s, duty cycle≤2%.
3
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HY1908D/U/S
Typical Operating Characteristics
Power Dissipation
105
Drain Current
90
I
D
- Drain Current (A)
limited by package
90
80
70
60
50
40
30
20
P
tot
- Power (W)
75
60
45
30
15
0
T
C
=25 C
0
20 40
60
80 100 120 140 160 180 200
o
10
0
T
C
=25 C,V
G
=10V
0
20
40
60 80 100 120 140 160 180 200
o
T
c
- Case Temperature (°C)
Safe Operation Area
500
T
c
- Case Temperature (°C)
I
D
- Drain Current (A)
100
Rd
s(
on
)L
im
it
100us
1ms
10
10ms
1
DC
0.1
0.1
T
C
=25 C
O
1
10
100
500
V
DS
- Drain - Source Voltage (V)
Thermal Transient Impedance
10
Thermal impedance (Zthjc)
1
Duty = 0.5
0.2
0.1
0.1
0.02
0.01
0.05
0.01
Single
Mounted on minimum pad
o
R
θ
JA
: 110 C/W
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
4
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HY1908D/U/S
Typical Operating Characteristics (Cont.)
Output Characteristics
140
120
Drain-Source On Resistance
11
10
R
DS(ON)
- On - Resistance (mΩ)
V
GS
=6,7,8,9,10V
I
D
- Drain Current (A)
100
5V
9
V
GS
=10V
8
7
6
5
4
3
80
60
4V
40
20
3V
0
0
1
2
3
4
5
0
20
40
60
80
100
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Gate-Source On Resistance
40
I
DS
=45A
35
Gate Threshold Voltage
1.6
1.4
I
DS
=250
µ
A
R
DS(ON)
- On - Resistance (mΩ)
30
25
20
15
10
5
0
Normalized Threshold Voltage
3
4
5
6
7
8
9
10
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75 100 125 150 175
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
5
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