HB3510P,HP3510P
100V N-Channel MOSFET
FEATURES
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-263
TO-220
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
1
2
3
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
T
C
= 25º unless otherwise noted
C,
Value
Parameter
Drain-Source Voltage (V
GS
= 0V)
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
(note2)
(note1)
(note1)
(note1)
Symbol
TO-263
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
100
50
120
±20
4500
50
36
TO-220
V
A
A
V
mJ
A
mJ
Unit
Power Dissipation (T
C
= 25º
C)
Operating Junction and Storage Temperature Range
P
D
T
J
, T
stg
83
110
-55~+150
W
º
C
Thermal Resistance
Value
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
TO-263
R
thJC
R
thJA
1.5
62.5
TO-220
1.14
K/W
60
Unit
.
1
V3.0
HB3510P,HP3510P
Specifications
T
J
= 25º unless otherwise noted
C,
Value
Parameter
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V, T
J
= 25º
C
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80V, V
GS
= 0V, T
J
= 125º
C
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance (Note3)
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
V
DD
= 50V, I
D
=50A,
R
G
= 25 Ω
V
DD
80V, I
D
= 50A,
V
GS
= 10V
--
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
--
--
--
--
--
--
--
1489
608
275
60
6
31
22
82
--
--
--
--
--
--
--
--
ns
nC
pF
I
GSS
V
GS(th)
R
DS(on)
V
GS
=
±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 15A
--
--
2.0
--
--
--
100
±100
4.0
38
nA
V
mΩ
100
--
--
--
--
1
μA
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
--
30
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
--
--
52
93
--
--
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
I
S
T
C
= 25 º
C
--
--
30
A
Pulsed Diode Forward Current
Body Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SM
V
SD
t
rr
Q
rr
T
J
= 25º I
SD
= 50A, V
GS
= 0V
C,
V
GS
= 0V,I
S
= 50A,
di
F
/dt =100A /μs
--
--
--
--
--
--
68
4.2
120
2
--
--
V
ns
μC
Notes
1.
2.
3.
Repetitive Rating: Pulse width limited by maximum junction temperature
I
AS
= 50A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25 º
C
Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
2
V3.0
HB3510P,HP3510P
Typical Characteristics
T
J
= 25º unless otherwise noted
C,
Figure 1. Output Characteristics (T
J
= 25º
C)
80
Figure 2. Body Diode Forward Voltage
10
3
I
S
, Source Current (A)
I
D
, Drain Current (A)
60
15V
10V
8V
7V
6V
5V
10
2
T
J
= 150º
C
40
10
1
T
J
= 25º
C
10
0
20
0
0
2
4
6
8
10
12
10
-1
0.2
0.4
0.6
0.8
1
1.2
1.4
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Drain Current vs. Temperature
35
V
SD
, Source-to-Drain Voltage (V)
Figure 4. BV
DSS
Variation vs. Temperature
1.15
V
GS
= 0V I
D
= 250uA
I
D
, Drain Current (A)
30
25
20
15
10
5
0
BV
DSS
(Normalized)
1.1
1.05
1
0.95
0.9
0
30
60
90
120
150
-50
0
50
100
150
T
C
, Case Temperature (A)
Figure 5. Transfer Characteristics
R
DS(on)
, On-Resistance (Normalized)
75
T
J
, Junction Temperature (º
C)
Figure 6. On-Resistance vs. Temperature
3
V
GS
= 10V I
D
= 15A
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
I
D
, Drain Current (A)
60
T
J
= 25º
C
45
30
T
J
= 150º
C
15
0
0
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (º
C)
3
V3.0
HB3510P,HP3510P
Typical Characteristics
T
J
= 25º unless otherwise noted
C,
Figure 7. Capacitance
10
4
12
Figure 8. Gate Charge
V
GS
, Gate-to-Source Voltage (V)
V
DD
= 20V
10
8
Capacitance (pF)
C
iss
10
3
V
DD
= 50V
V
DD
= 80V
6
4
C
oss
10
2
C
rss
V
GS
= 0V
f = 1MHz
2
0
0
15
30
45
60
10
1
0
15
30
45
60
V
DS
, Drain-to-Source Voltage (V)
Figure 9. Transient Thermal Impedance
TO-220F
Z
thJC
, Thermal Impedance (K/W)
10
1
10
1
Q
g
, Total Gate Charge (nC)
Figure 10. Transient Thermal Impedance
TO-251,TO-252
10
0
10
0
10
-1
10
-2
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-6
10
-3
T
p
, Pulse Width (s)
T
p
, Pulse Width (s)
.
4
V3.0
HB3510P,HP3510P
Figure A：Gate Charge Test Circuit and Waveform
Figure B：Resistive Switching Test Circuit and Waveform
Figure C：Unclamped Inductive Switching Test Circuit and Waveform
Suzhou Convert SemiConductor Co.,Ltd.
5
V3.0
微控制器 MCU
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