HB3710P,HP3710P
100V N-Channel MOSFET
FEATURES
Fast switching
TO-263
TO-220
100% avalanche tested
Improved dv/dt capability
1
2
3
1
2
3
1.Gate 2. Drain 3. Source
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Absolute Maximum Ratings
T
C
= 25º unless otherwise noted
C,
Value
Parameter
Drain-Source Voltage (V
GS
= 0V)
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
(note2)
(note1)
(note1)
Symbol
TO-220,TO-263
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
100
70
Figure 6
±20
1943
32
V
A
A
V
mJ
A
Unit
Repetitive Avalanche Energy
Power Dissipation (T
C
= 25º
C)
(note1)
E
AR
P
D
T
J
, T
stg
36
200
-55 to175
mJ
W
º
C
Operating Junction and Storage Temperature Range
Thermal Resistance
Value
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
TO-220,TO-263
R
thJC
R
thJA
0.75
62
℃/W
Unit
.
1
V3.1
HB3710P,HP3710P
Specifications
T
J
= 25º unless otherwise noted
C,
Value
Parameter
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V, T
J
= 25º
C
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80V, V
GS
= 0V, T
J
= 125º
C
V
GS
= +20V,V
DS
=0V
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance (Note3)
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
T
C
= 25 º
C
I
SM
V
SD
t
rr
Q
rr
T
J
= 25º I
SD
= 35A, V
GS
= 0V
C,
V
GS
= 0V,I
S
= 28A,
di
F
/dt =100A /μs
--
--
--
--
--
--
195
107
230
1.5
--
--
V
ns
μC
--
--
57
A
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
VDD = 50V,
ID =35A,
VGS= 10V
R
G
= 2.5 Ω
V
DD
=50V, I
D
= 35A,
V
GS
= 0 to 10V
--
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
--
--
--
--
--
--
--
--
--
2700
610
260
105
15
45
20
28
65
15
--
--
--
--
--
--
--
--
nC
pF
I
GSS
V
GS
=-20V, V
DS
=0V
V
GS(th)
R
DS(on)
gfs
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 35A
V
DS
= 10V, I
D
= 35A
--
2.0
--
--
-100
4.0
20
V
mΩ
--
--
--
--
100
100
nA
100
--
--
--
--
1
μA
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
--
15
85
S
ns
--
--
Notes
1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
3.
I
AS
= 30A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25 º
C
Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
.
2
V3.1
HB3710P,HP3710P
Typical Characteristics
T
J
= 25º unless otherwise noted
C,
3
V3.1
HB3710P,HP3710P
Typical Characteristics
T
J
= 25º unless otherwise noted
C,
4
V3.1
HB3710P,HP3710P
Typical Characteristics
T
J
= 25º unless otherwise noted
C,
.
5
V3.1
微控制器 MCU
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