HF640,HP640
200V N-Channel MOSFET
FEATURES
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Device Marking and Package Information
Device
HF640
HP640
Package
TO-220F
TO-220
Marking
HF640
HP640
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Value
Parameter
Drain-Source Voltage (V
GS
= 0V)
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
(note2)
(note1)
(note1)
(note1)
Symbol
TO-220F
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
200
18
72
±20
722
12
8.3
TO-220
V
A
A
V
mJ
A
mJ
Unit
Power Dissipation (T
C
= 25ºC)
Operating Junction and Storage Temperature Range
P
D
T
J
, T
stg
63.7
-55~+150
104
W
C
º
Thermal Resistance
Value
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
TO-220F
R
thJC
R
thJA
1.96
62.5
TO-220
1.2
60
K/W
Unit
1
V3.0
HF640,HP640
Specifications
T
J
= 25º , unless otherwise noted
C
Value
Parameter
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance (Note3)
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
T
C
= 25 ºC
T
J
= 25ºC, I
SD
= 18A, V
GS
= 0V
V
GS
= 0V,I
S
= 18A,
di
F
/dt =100A /μs
--
--
--
--
--
--
--
--
230
1.8
18
72
1.4
--
--
A
V
ns
μC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 100V, I
D
=18A,
R
G
= 25 Ω
V
DD
160V, I
D
= 18A,
V
GS
= 10V
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
--
--
--
--
--
--
--
--
--
--
1318
180
75
41
5.5
19.5
24
45
101
95
--
--
--
pF
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
V
GS
= 0V, I
D
= 250µA
V
DS
= 200V, V
GS
= 0V, T
J
= 25ºC
V
DS
= 160V, V
GS
= 0V, T
J
= 125ºC
V
GS
=
±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 9A
200
--
--
--
2.0
--
--
--
--
--
--
5
100
±100
4.0
0.15
V
μA
nA
V
Ω
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
--
0.12
--
--
--
--
--
--
--
ns
nC
Notes
1.
2.
3.
Repetitive Rating: Pulse width limited by maximum junction temperature
I
AS
= 15A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25 C
º
Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
2
V3.0
HF640,HP640
Typical Characteristics
T
J
= 25º unless otherwise noted
C,
Figure 1. Output Characteristics (T
J
= 25º
C)
90
80
Figure 2. Body Diode Forward Voltage
10
2
I
S
, Source Current (A)
I
D
, Drain Current (A)
70
60
50
20V
10V
8V
7V
6V
5V
T
J
= 150º
C
10
1
40
30
20
10
0
0
2
4
6
8
10
12
14
16
18
20
T
J
= 25º
C
10
0
10
-1
0.2
0.4
0.6
0.8
1
1.2
1.4
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Drain Current vs. Temperature
20
18
14
12
10
8
6
4
V
SD
, Source-to-Drain Voltage (V)
Figure 4. BV
DSS
Variation vs. Temperature
1.15
V
GS
= 0V I
D
= 250uA
I
D
, Drain Current (A)
BV
DSS
(Normalized)
16
1.1
1.05
1
0.95
0.9
2
0
25
50
75
100
125
150
-50
0
50
100
150
T
C
, Case Temperature (A)
Figure 5. Transfer Characteristics
R
DS(on)
, On-Resistance (Normalized)
60
T
J
, Junction Temperature (º
C)
Figure 6. On-Resistance vs. Temperature
3
2.5
2
1.5
1
0.5
0
V
GS
= 10V I
D
= 9A
I
D
, Drain Current (A)
50
40
30
20
10
0
T
J
= 25º
C
T
J
= 150º
C
0
2
4
6
8
10
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (º
C)
.
3
V3.0
HF640,HP640
Typical Characteristics
T
J
= 25º unless otherwise noted
C,
Figure 7. Capacitance
10
4
Figure 8. Gate Charge
12
V
GS
, Gate-to-Source Voltage (V)
Capacitance (pF)
C
iss
10
3
10
8
6
4
2
0
V
DD
= 40V
V
DD
= 100V
V
DD
= 160V
C
oss
10
2
V
GS
= 0V
f = 1MHz
10
1
0
20
40
C
rss
60
0
10
20
30
40
50
V
DS
, Drain-to-Source Voltage (V)
Figure 9. Transient Thermal Impedance
TO-220F
10
1
10
1
Q
g
, Total Gate Charge (nC)
Figure 10. Transient Thermal Impedance
TO-220
Z
thJC
, Thermal Impedance (K/W)
Z
thJC
, Thermal Impedance (K/W)
10
0
10
0
10
-1
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-1
10
0
10
1
10
-2
10
-3
10
-4
10
-7
10
-6
10
-5
10
-4
10
-3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-2
10
-1
10
0
T
p
, Pulse Width (s)
T
p
, Pulse Width (s)
.
4
V3.0
HF640,HP640
Figure A：Gate Charge Test Circuit and Waveform
Figure B：Resistive Switching Test Circuit and Waveform
Figure C：Unclamped Inductive Switching Test Circuit and Waveform
.
5
V3.0
嵌入式系统
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