HD840U/HU840U
Sep 2011
BV
DSS
= 500 V
HD840U/HU840U
500V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 25 nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 0.75 Ω (Typ.) @V
=10V
GS
100% Avalanche Tested
R
DS(on) typ
= 0.75 Ω
I
D
= 8.0 A
TO-252
TO-251
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
T
C
=25℃ unless otherwise specified
Parameter
Value
500
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
– Continuous (T
C
= 25℃)
– Continuous (T
C
= 100℃)
– Pulsed
(Note 1)
8.0
5.4
36
±30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
360
8.0
13.5
4.5
135
1.07
-55 to +150
300
Power Dissipation (T
C
= 25℃)
-
Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Parameter
Typ.
--
0.5
--
Max.
0.93
--
62.5
℃/W
Units
HD840U/HU840U
Electrical Characteristics
T
C
=25
°C
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GS
R
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
㎂
V
GS
= 10 V, I
D
= 4.0 A
2.0
--
--
0.75
4.0
0.85
V
Ω
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
㎂
I
D
= 250
㎂, Referenced to25℃
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, T
C
= 125℃
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
500
--
--
--
--
--
--
0.57
--
--
--
--
--
--
1
10
100
-100
V
V/℃
㎂
㎂
㎁
㎁
ΔBV
DSS
Breakdown Voltage Temperature
Coefficient
/ΔT
J
I
DSS
I
GSSF
I
GSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
1000
130
20
1300
170
26
㎊
㎊
㎊
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 4,5)
V
DS
= 250 V, I
D
= 8.0 A,
R
G
= 25
Ω
--
--
--
--
--
--
--
25
60
130
90
25
6
12
50
120
260
180
33
--
--
㎱
㎱
㎱
㎱
nC
nC
nC
V
DS
= 400V, I
D
= 8.0 A,
V
GS
= 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
trr
Qrr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 9.0 A, V
GS
= 0 V
I
S
= 9.0 A, V
GS
= 0 V
di
F
/dt = 100 A/μs
(Note 4)
--
--
--
--
--
--
--
--
335
2.95
8.0
36
1.4
--
--
A
V
㎱
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=8mH, I
AS
=8.0A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C
3. I
SD
≤9.0A, di/dt≤200A/μs, V
DD
≤BV
DSS
, Starting T
J
=25
°C
4. Pulse Test : Pulse Width
≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
HD840U/HU840U
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2000
12
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
1500
V
GS
, Gate-Source Voltage [V]
10
V
DS
= 100V
V
DS
= 250V
V
DS
= 400V
C
iss
C
oss
Capacitances [pF]
8
1000
* Note ;
1. V
GS
= 0 V
2. f = 1 MHz
6
4
500
C
rss
2
* Note : I
D
= 9.0 A
0
10
-1
0
10
0
10
1
0
5
10
15
20
25
30
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
HD840U/HU840U
Typical Characteristics
(continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
10
Figure 8. On-Resistance Variation
vs Temperature
10
2
Operation in This Area
is Limited by R
DS(on)
10
µs
I
D
, Drain Current [A]
10
1
I
D
, Drain Current [A]
100
µs
1 ms
10 ms
100 ms
DC
8
6
10
0
4
10
-1
* Notes :
1. T
C
= 25
o
C
2. T
J
= 150 C
3. Single Pulse
o
2
10
-2
10
0
10
1
10
2
10
3
0
25
50
75
100
o
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
10
0
Z
θJC
(t), Thermal Response
D=0.5
0.2
10
-1
* Notes :
1. Z
θJC
(t) = 0.93
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θJC
(t)
0.1
0.05
0.02
0.01
P
DM
single pulse
10
-2
t
1
10
-2
10
-1
t
2
10
0
10
1
10
-5
10
-4
10
-3
t
1
, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
HD840U/HU840U
Fig 12. Gate Charge Test Circuit & Waveform
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
Q
g
10V
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
V
DS
R
G
R
L
V
DD
( 0.5 rated V
DS
)
V
DS
90%
10V
DUT
V
in
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
V
DD
I
D
R
G
DUT
V
DD
BV
DSS
I
AS
BV
DSS
1
E
AS
= ---- L
L
I
AS2
--------------------
2
BV
DSS
-- V
DD
I
D
(t)
V
DS
(t)
t
p
10V
Time
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