HD60N03_HU60N03
Nov 2009
BV
DSS
= 30 V
HD60N03 / HU60N03
30V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 18.5 nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 0.014 Ω (Typ.) @V
GS
=10V
100% Avalanche Tested
R
DS(on)
= 0.014Ω
I
D
= 60 A
TO-252
TO-251
HD60N03
HU60N03
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Gate-Source Voltage
T
C
=25℃ unless otherwise specified
Parameter
– Continuous (T
C
= 25℃)
– Continuous (T
C
= 100℃)
– Pulsed
(Note 1)
Value
30
60
36.6
220
±20
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25℃)*
Power Dissipation (T
C
= 25℃)
- Derate above 25℃
230
60
11
7.0
2.0
100
0.7
-55 to +150
300
T
J
, T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient*
Junction-to-Ambient
Parameter
Typ.
--
--
--
Max.
1.0
40
62.5
℃/W
Units
* When mounted on the minimum pad size recommended (PCB Mount)
◎ SEMIHOW REV.A0,Nov 2009
HD60N03_HU60N03
Electrical Characteristics
T
C
=25
C
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GS
R
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
㎂
V
GS
= 10 V, I
D
= 30 A
1.0
--
--
0.012
2.5
0.014
V
Ω
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
㎂
I
D
= 250
㎂,
Referenced to25℃
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 24 V, T
C
= 150℃
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
30
--
--
--
--
--
--
0.03
--
--
--
--
--
--
1
10
100
-100
V
V/℃
㎂
㎂
㎁
㎁
ΔBV
DSS
Breakdown Voltage Temperature
/ΔT
J
Coefficient
I
DSS
I
GSSF
I
GSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
875
570
155
1140
740
200
㎊
㎊
㎊
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 4,5)
V
DS
= 15 V, I
D
= 30 A,
R
G
= 25 Ω
--
--
--
--
--
--
--
17
155
10
75
18.5
7
9.5
45
320
30
160
24
--
--
㎱
㎱
㎱
㎱
nC
nC
nC
V
DS
= 24 V, I
D
= 60 A,
V
GS
= 5.0 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
trr
Qrr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 60 A, V
GS
= 0 V
I
S
= 60 A, V
GS
= 0 V
di
F
/dt = 100 A/μs
(Note 4)
--
--
--
--
--
--
--
--
40
35
60
240
1.5
--
--
A
V
㎱
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=230μH, I
AS
=60A, V
DD
=15V, R
G
=25, Starting T
J
=25C
3. I
SD
≤50A, di/dt≤300A/μs, V
DD
≤BV
DSS
, Starting T
J
=25
C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Nov 2009
HD60N03_HU60N03
Typical Characteristics
10
2
I
D
, Drain Current [A]
I
D
, Drain Current [A]
V
GS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
Top :
10
2
10
1
10
1
175℃
25℃
-55℃
※
Notes :
1. V
DS
= 15V
2. 250μ s Pulse Test
※
Notes :
1. 250μ s Pulse Test
2. T
C
= 25℃
10
-1
10
0
10
1
10
0
0
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
40
10
2
Drain-Source On-Resistance
30
R
DS(ON)
[mΩ ],
V
GS
= 5V
20
V
GS
= 10V
I
DR
, Reverse Drain Current [A]
10
1
10
※
Note : T
J
= 25℃
175℃
0
25℃
※
Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
0
0
40
80
120
160
200
240
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
2500
10
V
DS
= 15V
V
DS
= 24V
2000
C
oss
C
iss
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
V
GS
, Gate-Source Voltage [V]
8
Capacitance [pF]
1500
6
1000
4
C
rss
2
※
Note : I
D
= 60A
500
0
0
-1
10
0
5
10
15
20
25
30
35
10
0
10
1
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
HD60N03_HU60N03
Typical Characteristics
(Continued)
1.2
2.5
BV
DSS
, (Norm
alized)
Drain-Source Breakdown Voltage
2.0
1.0
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
1.1
1.5
1.0
0.5
※
Notes :
1. V
GS
= 10 V
2. I
D
= 30 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Tem
perature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
10
3
70
Operation in This Area
is Limited by R
DS(on)
60
100
µ
s
I
D
, Drain Current [A]
10 ms
DC
10
1
I
D
, Drain Current [A]
10
2
50
1 ms
40
30
20
※
Notes :
1. T
C
= 25 C
o
10
0
2. T
J
= 175 C
3. Single Pulse
-1
o
10
10
10
0
10
1
0
25
50
75
100
125
150
175
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
(t), T h e rm a l R e s p o n s e
10
0
D = 0 .5
0 .2
0 .1
10
-1
※
N otes :
1 . Z
θ
J C
( t ) = 1 . 5 0
℃
/W M a x .
2 . D u t y F a c t o r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
( t )
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
P
DM
t
1
t
2
Z
θ
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
HD60N03_HU60N03
Gate Charge Test Circuit & Waveform
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
Q
g
5V
Q
gs
Q
gd
V
GS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
V
DS
V
GS
R
G
R
L
V
DD
V
DS
90%
5V
DUT
V
GS
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
I
D
R
G
DUT
t
p
BV
DSS
1
---- L I
AS2
--------------------
E
AS
=
2
BV
DSS
- V
DD
BV
DSS
I
AS
V
DD
V
DD
t
p
I
D
(t)
V
DS
(t)
Time
10V
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
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