SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD
DO-41
Plastic-Encapsulate Transistors
FR101 THRU FR107
FEATURES
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•
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•
VOLTAGE RANGE
CURRENT
50 to 1000 Volts
1.0 Ampere
DO-41
.034(0.8)
.028(0.6)
1.0(20)
MIN.
DIA.
Low coat construction
Fast switching for high efficency.
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
260℃/10 secods/.375”(9.5mm)lead length at 5 lbs(2.3kg) tension
.205(5.2)
.160(4.2)
.107(2.7) DIA.
.080(2.0)
1.0(20)
MIN.
MECHANICAL DATA
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•
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Case: Transfer molded plastic
Epoxy: UL94V-O rate flame retardant
Polarity: Color band denotes cathode end
Lead: Plated axial lead, solderable per MIL-STD-202E method 208C
Mounting position: Any
Weight: 0.012 ounce, 0.33 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
•
•
•
Ratings at 25
O
C ambient temperature unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load
For capacitive load derate current by 20%
SYMBOLS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375”(9.5mm) lead length at T
A
= 75℃
Peak Forward Surge Current
8.3mS single half sine wave superimposed on
rated load (JEDEC method)
Maximum Instantaneous Forward Voltage @ 1.0A
Maximum DC Reverse Current at Rated
DC Blocking Voltage
T
A
= 25℃
T
A
= 100℃
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
trr
C
J
R
θJA
T
J
T
STG
FR101
50
35
50
FR102
100
70
100
FR103 FR104 FR105 FR106
200
400
600
800
140
280
420
560
200
400
600
800
1.0
30
1.3
5.0
100
FR107
1000
700
1000
UNITS
Volts
Volts
Volts
Amp
Amps
Volts
µA
Maximum Reverse Recovery Time (Note 3) T
J
=25℃
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
150
15
50
(-55 to +150)
(-55 to +150)
250
500
ns
pF
℃
/W
℃
℃
Notes:
1.Measured at 1.0MHz and Applied Reverse Voltage of 4.0Volits.
2 Thermal Resistance from junction to Ambient at .375”(9.5mm)lead length, P.C.board mounted.
3.Reverse Recovery Test Conditions:If=0.5A,Ir=1.0A,Irr=0.25A
SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD
DO-41
Plastic-Encapsulate Transistors
FR101 THRU FR107
VOLTAGE RANGE
CURRENT
50 to 1000 Volts
1.0 Ampere
RATING AND CHRACTERISTIC CURVES FR101 THRU FR107
FIG.1-TYPICAL FORWARD CURRENT
DERATING CURVE
1.2
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
AVERAGE FORWARD CURRENT,
30
PEAK FORWARD SURGE
1.0
0.8
0.6
8.3ms Single Half Sine-Wave
(JEDEC Method) Tj=Tjmax
0.4
0.2
0
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375"(9.5mm)Lead Length
CURRENT, (A)
20
(A)
10
25
50
75
100
125
150
175
0
1
2
4
6
8
10
20
40
60 80 100
AMBIENT TEMPERATURE, (° C)
NUMBER OF CYCLES AT 60 Hz
FIG.3-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT,
20
10
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT,
(mA)
10
(A)
1.0
T
j
=100° C
1.0
0.1
Tj =25° C
Pulse Width=300us
1% Duty Cycle
0.01
T
j
=25° C
0.1
0
20
40
60
80
100
120
140
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
INSTANTANEOUS FORWARD VOLTAGE,(V)
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
50Ω
NONINDUCTIVE
FIG.6-TEST CIRCUIT DIAGRAM AND
REVERSE REXOVERY TIME CHARACTERISTIC
CAPACITANCE,(pF)
10Ω
NONINDUCTIVE
(-)
+0.5A
0
0.25A
(+)
25 Vdc
（approx）
(-)
D.U.T
PULSE
GENERATIOR
(NOTE 2)
10
1Ω
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
-1.0A
TJ=25° C F=1MHz
Vsig=50mVp-p
NOTE: 1.Rise Time =7ns max.Input Impedance=1megohm.22pF
2.Rise time=10ns max.Source Impedance=50 ohms
SET TIME BASE FOR
50 /100NS /cm
1
0.1
1.0
10
100
REVERSE VOLTAGE,(V)
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