SMBJ SERIES
SMBG Plastic-Encapsulate Diodes
Transient Voltage Suppressor Diodes
Features
●
P
PP
600W
5.0V- 440V
●
V
RWM
●
Glass passivated chip
Applications
●
Clamping Voltage
Marking
●
SMBJ
XXCA/XXA/XX
XX
:
From 5.0 To 440
SMBG
Bi-directional
Uni-direction
Item
Peak pulse power dissipation
Peak pulse current
Power dissipation
Peak forward surge current
Operating junction and
storage temperature range
Symbol
P
PPM
I
PPM
P
D
I
FSM
T
J
,T
STG
Unit
W
A
W
A
℃
Conditions
with a 10/1000us waveform
with a 10/1000us waveform
On infinite heat sink at T
L
=75℃
8.3 ms single half sine-wave unidirectional only
Max
600
See Next Table
5.0
100
-55 to +150
Electrical Characteristics（Ta=25
℃
Unless otherwise specified）
Item
Maximum instantaneous forward
Voltage
Symbol
V
F
Unit
V
Conditions
Max
at 50A for unidirectional only
3.5/5.0
R
θJL
Thermal resistance
R
θJA
℃/W
℃/W
junction to lead
junction to ambient
20
100
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25℃ per Fig.2.
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V
H
igh Diode Semiconductor
1
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Part Number
(Uni)
Part Number
(Bi)
V
BR
@I
T
Breakdown Voltage V
BR
@I
T
IT
(1)
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Min(V)
SMBJ85
SMBJ85A
SMBJ90
SMBJ90A
SMBJ100
SMBJ100A
SMBJ110
SMBJ110A
SMBJ120
SMBJ120A
SMBJ130
SMBJ130A
SMBJ140
SMBJ140A
SMBJ150
SMBJ150A
SMBJ160
SMBJ160A
SMBJ170
SMBJ170A
SMBJ180
SMBJ180A
SMBJ190
SMBJ190A
SMBJ200A
SMBJ220A
SMBJ250A
SMBJ300A
SMBJ350A
SMBJ400A
SMBJ440A
SMBJ85C
SMBJ85CA
SMBJ90C
SMBJ90CA
SMBJ100C
SMBJ100CA
SMBJ110C
SMBJ110CA
SMBJ120C
SMBJ120CA
SMBJ130CA
SMBJ130CA
SMBJ140C
SMBJ140CA
SMBJ150C
SMBJ150CA
SMBJ160C
SMBJ160CA
SMBJ170C
SMBJ170CA
SMBJ180C
SMBJ180CA
SMBJ190C
SMBJ190CA
SMBJ200CA
SMBJ220CA
SMBJ250CA
SMBJ300CA
SMBJ350CA
SMBJ400CA
SMBJ440CA
94.40
94.40
100.00
100.00
111.00
111.00
122.00
122.00
133.00
133.00
144.00
144.00
155.70
155.00
167.00
167.00
178.00
178.00
189.00
189.00
200.20
200.00
211.30
211.00
224.00
246.00
279.00
335.00
391.00
447.00
492.00
Max (V)
115.00
104.00
122.00
111.00
136.00
123.00
149.00
135.00
163.00
147.00
176.00
159.00
190.40
171.00
204.00
185.00
218.00
197.00
231.00
209.00
244.80
220.00
258.40
232.00
247.00
272.00
309.00
371.00
432.00
494.00
543.00
I
R
@V
WM
Maximum
Reverse
Leakage I
R (3)
(μA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
V
RWM
Working Peak
Reverse
Voltage
V
RWM
(V)
85.0
85.0
90.0
90.0
100.0
100.0
110.0
110.0
120.0
120.0
130.0
130.0
140.0
140.0
150.0
150.0
160.0
160.0
170.0
170.0
180.0
180.0
190.0
190.0
200.0
220.0
250.0
300.0
350.0
400.0
440.0
IPP
Maximum
Reverse Surge
Current IPP
(2)
(A)
4.0
4.4
3.7
4.1
3.3
3.7
3.1
3.4
2.8
3.1
2.6
2.9
2.4
2.6
2.2
2.5
2.1
2.3
2.0
2.2
1.8
2.1
1.7
1.9
1.8
1.7
1.5
1.2
1.0
0.9
0.8
Maximum
Clamping
Voltage Vc
@ I
PP
(V)
151.0
137.0
160.0
146.0
179.0
162.0
196.0
177.0
214.0
193.0
231.0
209.0
250.6
226.8
268.0
243.0
287.0
259.0
304.0
275.0
322.2
291.6
340.1
307.8
324.0
356.0
405.0
486.0
567.0
648.0
713.0
Notes:
(1) t
p
≤50ms
Pulse test: t
p
≤50ms
(2) Surge current waveform per Fig. 3 and derated per Fig.2.
(3) For bi-directional types having VWM of 10 V and less, the I
R
limit is doubled
(4) For the bi-directional SMBJ5.0CA, the maximum V
BR
is 7.25 V
H
igh Diode Semiconductor
4
Typical Characteristics
FIG1:Peak Pulse Power Rating Curve
PPPM(KW)
PPP or IPP(%)
FIG2: Pulse Power or Current vs. Initial Junction Temperature
100
100
Non-Repetitive Pulse
Waveform shown in Fige.3
TA=25℃
75
10
50
1.0
25
0.1
0.2×0.2"(5.0×5.0mm)
Copper Pad Areas
0.1μs
1μs
10μs
100μs
1.0ms
10ms
td(μs)
0
0
25
50
75
100
125
150
175
200
TJ
（℃）
Rth(
℃
/W)
FIG3: Pulse Waveform
IPPM(%)
150
tr=10μs
TJ=25
℃
Pulse Width(td) is defined as
the Point where the Peak
Current Decays to 50% of IPPM
FIG4:Typical Transient Thermal Impedance
100
Peak Value
IPPM
100
10
Half Value - IPP
2
IPPM
50
10/1000μs Waveform as
Defined by R.E.A.
1
td
0
0
1.0
2.0
3.0
4.0
t（ms）
0.1
0.001
0.01
0.1
1
10
100
1000
tp(s)
IFSM(A)
200
TJ=TJMax.
100
8.3ms Single Half Sine-Wave
PD(W)
FIG5: Maximum Non-Repetitive Surge Current
6
5
4
FIG6:Steady State Power Dissipation
50
3
2
1
10
0
10
100
Number of Cycles
0
0
25
50
75
100
125
150
175
200
TL(
℃
)
H
igh Diode Semiconductor
5
详细参数
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