ES1AL THRU ES1JL
SOD-1 23FL Plastic-Encapsulate Diodes
Super Fast Recovery Rectifier Diode
HD FL 50
Features
●I
o
1A
SOD-1 23FL
50V-600V
●VRRM
●High
surge current capability
●
Glass passivated chip
●
Polarity: Color band denotes cathode
Applications
●
Rectifier
Marking
●
ES1AL-ES1DL : ESL
●
ES1EL-ES1GL : ESM
●
ES1JL : ESH
Item
Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Symbol Unit
V
RRM
V
RMS
Test Conditions
AL BL CL
50
35
100
70
ES1
DL
EL
300
210
GL
400
280
JL
600
420
V
150 200
105 140
1.0
Average Forward Current
I
F(AV)
A
90
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
I
FSM
T
J
T
STG
A
℃
℃
30
-55~+150
-55 ~ +150
Electrical Characteristics (T=25℃ Unless otherwise specified）
Item
Peak Forward Voltage
Maximum reverse recovery
time
Peak Reverse Current
Symbol
V
F
t
rr
I
RRM1
I
R
θ
J-A
Unit
V
ns
μA
Test Condition
I
F
=1.0A
I
F
=0.5A,I
R
=1.0A,I
rr
=0.25A
V
RM
=V
RRM
Ta =25℃
Ta =125℃
ES1
AL BL CL
0.95
35
5
100
70
25
1)
DL
EL
1.25
GL
JL
1.70
Thermal
Resistance(Typical)
Between junction and ambient
℃
/W
Between junction and terminal
R
θ
J-L
1)
Notes:
（1）
Thermal resistance between junction and ambient and between junction and lead mounted on P.C.B with 3mm*3mm
copper pad areas.
H
igh Diode Semiconductor
1
Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
IO(A)
IFSM(A)
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
30
1.0
0.8
24
8.3ms Single Half Sine Wave
JEDEC Method
0.6
18
0.4
12
0.2
Single Phase
Half Wave 60Hz
Resistive Load
0
0
50
100
150
Ta(
℃
)
6
1
2
10
20
100
Number of Cycles
FIG.3: TYPICAL FORWARD CHARACTERISTICS
IR(uA)
FIG.4
：
TYPICAL REVERSE CHARACTERISTICS
1000
Tj=150
℃
ES1AL-ES1DL
IF(A)
100
TJ=25
℃
Pulse width=300us
1% Duty Cycle
10
100
Tj=125
℃
1.0
ES1EL-ES1GL
10
0.1
ES1JL
1.0
Tj=25
℃
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VF(V)
0.1
0
20
40
60
80
100
Voltage(%)
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
IF
t
rr
V
R
I
F
R
L
0
I
RR
t
I
R
H
igh Diode Semiconductor
2
详细参数
全文预览
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
