MMBTA9 2
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP
)
SOT- 23
Features
●
High voltage transistor
Marking:
●
2D
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current -
Pulsed
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-300
-300
-5
-200
-500
300
417
150
-55½+150
Unit
V
V
V
mA
mA
mW
℃/W
℃
℃
B
E
C
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
Test conditions
I
C
= -100
μ
A, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100
μ
A, I
C
=0
V
CB
=-200V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
=-10mA
V
CE
= -10V, I
C
=-30mA
I
C
=-20mA, I
B
= -2mA
I
C
= -20mA, I
B
= -2mA
V
CE
=-20V, I
C
= -10mA
60
100
60
-0.2
-0.9
50
V
V
MHz
200
Min
-300
-300
-5
-0.25
-0.1
Max
Unit
V
V
V
μ
A
μ
A
f
T
f=
30MHz
H
igh Diode Semiconductor
1
Typical Characteristics
70
I
C
——
-500uA
-450uA
V
CE
COMMON
EMITTER
T
a
=25
℃
1000
h
FE
——
I
C
60
(mA)
I
C
50
COLLECTOR CURRENT
-300uA
40
DC CURRENT GAIN
-350uA
h
FE
-400uA
T
a
=100
℃
T
a
=25
℃
-250uA
30
100
-200uA
-150uA
20
-100uA
I
B
=-50uA
10
-0.1
10
COMMON EMITTER
V
CE
= -10V
24
-1
-10
-100
-300
0
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
CEsat
-500
——
I
C
-900
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
T
a
=100
℃
-100
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
T
a
=25
℃
-600
T
a
=25
℃
T
a
=100
℃
β=10
-50
-10
-0.1
-1
-10
-50
-300
-0.1
-1
-10
β=10
-100
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
-100
I
C
——
V
BE
300
f
T
(MHz)
——
I
C
(mA)
I
C
f
T
-1
TRANSITION FREQUENCY
-10
100
COLLECTOR CURRENT
T =1
00
℃
a
T =2
5
℃
a
COMMON EMITTER
V
CE
= -10V
-0.1
-0
-300
-600
-900
-1200
10
-0.1
-1
COMMON EMITTER
V
CE
=-20V
T
a
=25
℃
-10
-100
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
I
C
(mA)
100
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
350
P
C
——
T
a
(pF)
C
ib
COLLECTOR POWER DISSIPATION
P
C
(mW)
-20
T
a
=25
℃
300
250
C
CAPACITANCE
200
10
C
ob
150
100
50
1
-0.1
-1
-10
0
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
H
igh Diode Semiconductor
2
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