MMBTA4 2
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
●
High breakdown voltage
●
Low collector-emitter saturation voltage
●
Complementary to MMBTA92 (PNP)
Marking:
●
1D
SOT- 23
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
300
300
5
300
350
357
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
B
E
C
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
Test conditions
I
C
= 100μA,I
E
=0
I
C
= 1mA, I
B
=0
I
E
= 100μA, I
C
=0
V
CB
=200V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
I
C
=20mA, I
B
= 2mA
I
C
= 20mA, I
B
=2mA
V
CE
= 20V, I
C
= 10mA,
60
100
60
0.2
0.9
50
V
V
MHz
200
Min
300
300
5
0.25
0.1
Max
Unit
V
V
V
μA
μA
f
T
f=
30MHz
H
igh Diode Semiconductor
1
Typical Characteristics
18
16
I
C
——
90uA
V
CE
80uA
70uA
60uA
50uA
40uA
30uA
COMMON
EMITTER
T
a
=25
℃
h
FE
1000
h
FE
——
I
C
(mA)
14
12
10
8
6
T
a
=100
℃
COLLECTOR CURRENT
DC CURRENT GAIN
I
C
T
a
=25
℃
100
20uA
4
2
0
0
2
4
6
8
10
12
14
16
18
20
22
10
0.1
I
B
=10uA
COMMON EMITTER
V
CE
=10V
1
10
100
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
500
V
CEsat
——
I
C
900
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
T
a
=25
℃
600
100
T
a
=100
℃
T
a
=25
℃
T
a
=100
℃
β=10
10
0.1
1
10
100
300
0.1
β=10
COLLECTOR CURREMT
1
COLLECTOR CURREMT
I
C
(mA)
I
C
10
(mA)
100
100
I
C
——
V
BE
300
f
T
——
I
C
(mA)
I
C
f
T
T =1
00
℃
a
T =2
5
℃
a
(MHz)
10
100
1
TRANSITION FREQUENCY
COLLECTOR CURRENT
COMMON EMITTER
V
CE
=10V
0.1
0
300
600
900
1200
COMMON EMITTER
V
CE
=20V
T
a
=25
℃
10
0.1
1
10
100
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
I
C
(mA)
100
C
ob
/C
ib
——
V
CB
/V
EB
COLLECTOR POWER DISSIPATION
P
C
(mW)
f=1MHz
I
E
=0/I
C
=0
400
P
C
——
T
a
C
ib
(pF)
T
a
=25
℃
300
CAPACITANCE
C
10
200
C
ob
100
1
0.1
1
10
20
0
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
H
igh Diode Semiconductor
2
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