S9 015
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
●
Complementary
to
S9014
SOT- 23
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-50
-45
-5
-100
200
625
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
B
E
C
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Test conditions
I
C
= -100
μ
A, I
E
=0
I
C
= -0.1mA, I
B
=0
I
E
=-100
μ
A, I
C
=0
V
CB
=-50 V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
=-5V, I
C
= -1mA
I
C
=-100mA, I
B
= -10mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-5V, I
C
= -10mA
150
200
Min
-50
-45
-5
-0.1
-0.1
1000
-0.3
-1
V
V
MHz
Typ
Max
Unit
V
V
V
μ
A
μ
A
Transition frequency
f=
30MHz
CLASSIFICATION OF
h
FE
Rank
Range
L
200-450
M6
H
450-1000
M7
1
Marking
H
igh Diode Semiconductor
Typical Characteristics
Static Characteristic
-8
1000
h
FE
COMMON
EMITTER
T
a
=25
℃
—— I
C
T
a
=100
℃
-20uA
(mA)
-6
-18uA
-16uA
-14uA
h
FE
T
a
=25
℃
I
C
COLLECTOR CURRENT
-4
-12uA
-10uA
-8uA
DC CURRENT GAIN
100
-2
-6uA
-4uA
I
B
=-2uA
COMMON EMITTER
V
CE
= -5V
-8
10
-0.1
-1
-10
-100
-0
-0
-2
-4
-6
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-1
V
CEsat
——
I
C
-2
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
-1
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=25
℃
-0.1
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
β=10
-0.01
-0.2
-1
-10
-100
-0.1
-0.2
-1
-10
β=10
-100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
-100
—— V
BE
1000
f
T
——
I
C
(mA)
I
C
-10
T
a
=100
℃
TRANSITION FREQUENCY
COLLECTOR CURRENT
f
T
100
T
a
=25
℃
-1
(MHz)
COMMON EMITTER
V
CE
=-5V
-0.1
-0.0
-0.3
-0.6
-0.9
-1.2
COMMON EMITTER
V
CE
=-5V
T
a
=25
℃
10
-0.1
-1
-10
-100
BASE-EMMITER VOLTAGE V
BE
(V)
COLLECTOR CURRENT
I
C
(mA)
C
ob
/ C
ib
30
—— V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
250
P
C
——
T
a
(pF)
10
C
ib
COLLECTOR POWER DISSIPATION
P
C
(mW)
-20
T
a
=25
℃
200
C
150
CAPACITANCE
C
ob
100
50
1
-0.1
0
0
25
50
75
100
125
150
-1
-10
REVERSE VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
H
igh Diode Semiconductor
2
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