HD2302
SOT-23 Plastic-Encapsulate MOSFET
N -Channel MOSFET
Product Summary
V
(BR)DSS
20
V
R
DS(on)
MAX
60mΩ
@
4.5V
115mΩ
@
2.5V
I
D
2.1A
SOT- 23
D
Features
●
TrenchFET Power MOSFET
●
Excellent R
DS(on)
and Low Gate Charge
Applications
●
Extreme
fast switches
S
G
Marking
:
●
S2
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source-Drain Current(Diode Conduction)
Power Dissipation
Thermal Resistance from Junction to Ambient
(t≤5s)
Operating Junction
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
S
P
D
R
θJA
T
J
T
STG
Value
20
±8
2.1
0.6
0.4
312.5
150
-55 ~+150
Unit
V
A
W
℃/W
℃
H
igh Diode Semiconductor
1
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Static
Drain-source breakdown voltage
Gate-threshold voltage
Gate-body leakage
Zero gate voltage drain current
Drain-source on-resistance
Forward transconductance
Diode forward voltage
Dynamic
Total gate charge
Gate-source charge
Gate-drain charge
Input capacitance
b
Output capacitance
Switching
b
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Notes :
a.
b.
b
a
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
r
DS(on)
g
fs
V
SD
Test Condition
V
GS
= 0V, I
D
=10µA
V
DS
=V
GS
, I
D
=50µA
V
DS
=0V, V
GS
=±8V
V
DS
=20V, V
GS
=0V
V
GS
=4.5V, I
D
=3.6A
V
GS
=2.5V, I
D
=3.1A
V
DS
=5V, I
D
=3.6A
I
S
=0.94A,V
GS
=0V
Min
20
0.65
Typ
Max
Units
0.95
1.2
±100
1
V
nA
µA
Ω
S
0.035
0.045
8
0.76
0.060
0.115
a
1.2
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
=10V,V
GS
=0V,f=1MHz
V
DS
=10V,V
GS
=4.5V,I
D
=3.6A
4.0
0.65
1.5
300
120
80
10
nC
pF
Reverse transfer capacitance
b
t
d(on)
t
r
t
d(off)
t
f
V
DD
=10V,
R
L
=5.5Ω,
I
D
≈3.6A,
V
GEN
=4.5V,Rg=6Ω
7
55
16
10
15
80
60
25
ns
Pulse Test : Pulse width≤300µs, duty cycle
≤2%.
These parameters have no way to verify.
H
igh Diode Semiconductor
2
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
