SS12F THRU SS120F
SMAF Plastic-Encapsulate Diodes
Features
●I
o
1A
SMAF
HD AF28
20V-200V
●VRRM
●High
surge current capability
●
Polarity: Color band denotes cathode
Applications
●
Rectifier
Marking
●
SS12F-SS120F : SS12-SS120
Item
Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Average Forward Current
Surge(Non repetitive)Forward
Current
Junction
Temperature
Symbol Unit
V
RRM
V
RMS
Test Conditions
SS SS SS SS SS SS SS SS SS
12F 13F 14F 15F 16F 18F 110F 115F 120F
20
14
30
21
40
28
50
35
60
42
1.0
80
56
100
70
150
105
200
140
V
V
A
60HZ Half-sine wave, Resistance
load, TL(Fig.1)
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
I
F(AV)
I
FSM
T
J
T
STG
A
℃
℃
30
-55~+125
-55~+150
-55 ~ +150
Storage Temperature
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Item
Peak Forward Voltage
Peak Reverse Current
Symbol Unit
V
F
I
RRM1
I
RRM2
R
θJ-A
℃
/W
R
θJ-L
V
mA
Test Condition
I
F
=1.0A
V
RM
=V
RRM
Ta =25℃
Ta =100℃
SS SS SS SS SS SS SS SS SS
12F 13F 14F 15F 16F 18F 110F 115F 120F
0.55
0.5
10
88
28
1)
0.70
0.85
0.1
5.0
0.95
Thermal
Resistance(Typical)
Between junction and ambient
Between junction and terminal
1)
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
H
igh Diode Semiconductor
1
Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
IO(A)
SS12F-SS14F
SS15F-SS120F
0.8
FIG2:Surge Forward Current Capadility
IFSM(A)
50
1.0
40
0.6
30
0.4
20
0.2
10
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5.0mm×5.0mm)Copper Pad Areas
0
0
25
50
75
100
125
150
TL(
℃
)
0
1
2
5
10
20
50
100
Number of Cycles
FIG.3: TYPICAL FORWARD CHARACTERISTICS
IF(A)
FIG.4
：
TYPICAL REVERSE CHARACTERISTICS
IR(mA)
100
SS12F-SS16F
SS18F-SS120F
100
TJ=25
℃
Pulse width=300us
1% Duty Cycle
10
10
1.0
1.0
Tj=125
℃
0.1
SS12F-SS14F
SS15F-SS16F
SS18F-SS110F
SS115F-SS120F
Tj=75
℃
0.1
0.01
Tj=25
℃
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF(V)
0.001
0
20
40
60
80
100
Voltage(%)
H
igh Diode Semiconductor
2
微控制器 MCU
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