SS52 THRU SS520
SMAG Plastic-Encapsulate Diodes
Features
●I
o
5A
SMAG
20V-200V
●VRRM
●High
surge current capability
●
Polarity: Color band denotes cathode
Applications
●
Rectifier
Marking
●
SS5X
X
:
From 2 To 20
Item
Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Symbol Unit
V
RRM
V
RMS
Test Conditions
SS5
2
20
14
3
30
21
4
40
28
5
50
35
6
60
42
5.0
8
80
56
10
100
70
15
150
105
20
200
140
V
V
A
60HZ Half-sine wave, Resistance
load, TL(Fig.1)
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
Average Forward Current
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
I
F(AV)
I
FSM
T
J
T
STG
A
℃
℃
150
-65~+125
-65~+150
-65 ~ +150
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Item
Peak Forward Voltage
Peak Reverse Current
Symbol Unit
V
F
I
RRM1
I
RRM2
R
θ
J-A
R
θ
J-L
V
mA
Test Condition
I
F
=5.0A
V
RM
=V
RRM
Ta =25℃
Ta =100℃
SS5
2
3
0.55
0.5
10
55
1)
17
1)
4
5
0.7
6
8
10
0.85
15
20
0.95
0.1
0.5
Thermal
Resistance(Typical)
℃
/
W
Between junction and ambient
Between junction and terminal
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
H
igh Diode Semiconductor
1
Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
IFSM(A)
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
150
IO(A)
6.0
SS52-SS54
5.0
SS55-SS520
120
8.3ms Single Half Sine Wave
JEDEC Method
4.0
90
3.0
60
2.0
1.0
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5mm× 5mm)Copper Pad Areas
0
30
0
25
50
75
100
125
150
0
1
2
10
20
100
Number of Cycles
TL(
℃
)
FIG.3: TYPICAL FORWARD CHARACTERISTICS
IF(A)
FIG.4
：
TYPICAL REVERSE CHARACTERISTICS
IR(mA)
100
SS52-SS56
SS58-SS520
10
Tj=125
℃
100
TJ=25
℃
Pulse width=300us
1% Duty Cycle
10
5.0
1.0
1.0
Tj=75
℃
0.1
SS52-SS54
SS55-SS56
SS58-SS510
SS515-SS520
0.1
0.01
Tj=25
℃
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF(V)
0.001
0
20
40
60
80
100
Voltage(%)
H
igh Diode Semiconductor
2
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