S9 013
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
●
High Collector Current.
●
Complementary
to
S9012.
●
Excellent
h
FE
Linearity.
Marking:
●
J3
SOT- 23
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
25
5
500
300
416
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
B
E
C
Electrical Characteristics (T=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test
conditions
Min
40
25
5
0.1
0.1
0.1
120
40
0.6
1.2
0.7
150
8
V
V
V
MHz
pF
400
Typ
Max
Unit
V
V
V
uA
uA
uA
= 0
I
C
=0.1mA, I
E
V
(BR)CBO
= 0
I
C
=1mA, I
B
V
(BR)CEO
= 0
I
E
=0.1mA, I
C
V
(BR)EBO
= 0
V
CB
=40V, I
E
I
CBO
= 0
V
CE
=20V, I
B
I
CEO
= 0
V
EB
=5V, I
C
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
V
CE
=1V, I
C
50mA
=
V
CE
=1V, I
C
500mA
=
I
C
=500mA, I
B
50mA
=
I
C
=500mA, I
B
50mA
=
V
CB
=1V,I
C
= 10mA,
V
CE
=6V,I
C
=20mA, f=30MHz
V
CB
=6V, I
E
=0, f=1MHz
CLASSIFICATION OF
h
FE
RANK
RANGE
L
120-200
H
200-350
J
300-400
H
igh Diode Semiconductor
1
Typical Characteristics
Static Characteristic
400uA
(mA)
80
100
1000
h
FE
——
I
C
COMMON EMITTER
V
CE
=1V
350uA
300uA
COMMON
EMITTER
T
a
=25
℃
h
FE
T
a
=100
℃
DC CURRENT GAIN
T
a
=25
℃
100
COLLECTOR CURRENT
I
C
60
250uA
200uA
40
150uA
100uA
20
I
B
=50uA
0
0
4
8
12
16
20
10
1
3
10
30
100
500
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
500
V
CEsat
——
I
C
1.2
V
BEsat
——
I
C
300
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
0.8
T
a
=25
℃
100
T
a
=100
℃
T
a
=100
℃
30
0.4
T
a
=25
℃
β=10
10
1
3
10
30
100
500
0.0
1
3
10
30
100
β=10
500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
100
I
C
COMMON EMITTER
V
CE
=1V
—— V
BE
100
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/ I
C
=0
(mA)
30
C
ib
(pF)
T
a
=100
℃
30
T
a
=25
℃
I
C
10
COLLECTOR CURRENT
C
CAPACITANCE
3
10
C
ob
1
T
a
=25
℃
3
0.3
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1
0.1
0.3
1
3
10
20
BASE-EMMITER VOLTAGE V
BE
(V)
REVERSE VOLTAGE
V
(V)
1000
f
T
—— I
C
V
CE
=6V
T
a
=25
℃
COLLECTOR POWER DISSIPATION
P
C
(mW)
400
P
C
——
T
a
(MHz)
TRANSITION FREQUENCY
f
T
300
300
100
200
100
10
10
0
30
100
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
H
igh Diode Semiconductor
2
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
