BC846-8
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
●
Ideally suited for automatic insertion
●
For Switching and AF Amplifier Applications
SOT- 23
Marking:
●
BC846A=1A;BC846B=1B;
●
BC847A=1E;BC847B=1F;BC847C=1G;
●
BC848A=1J;BC848B=1K;BC848C=1L;
C
B
E
Symbol
V
CBO
Parameter
Value
Unit
V
Collector-Base Voltage
BC846
BC847
BC848
80
50
30
V
CEO
Collector-Emitter Voltage
V
BC846
BC847
BC848
V
EBO
I
C
P
C
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
65
45
30
6
0.1
200
625
150
-55~+150
V
A
mW
R
ΘJA
T
J
T
stg
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
℃/W
℃
℃
H
igh Diode Semiconductor
1
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Collector-base breakdown voltage
BC846
BC847
BC848
Collector-emitter breakdown voltage
BC846
BC847
BC848
Emitter-base breakdown voltage
Collector cut-off current
BC846
BC847
BC848
Emitter cut-off current
DC current gain
BC846A,847A,848A
BC846B,847B,848B
BC847C,BC848C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CBO
T est conditions
I
C
= 10µA, I
E
=0
Min
80
50
30
65
Typ
Max
Unit
V
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
I
C
= 10mA, I
B
=0
I
E
= 10µA, I
C
=0
V
CB
=70 V , I
E
=0
V
CB
=50 V , I
E
=0
V
CB
=30 V , I
E
=0
V
EB
=5 V , I
C
=0
45
30
6
0.1
0.1
110
220
450
800
0.5
1.1
100
4.5
V
V
μ
A
μ
A
V
CE
= 5V, I
C
= 2mA
I
C
=100mA, I
B
= 5mA
I
C
=100mA, I
B
= 5mA
V
CE
= 5 V, I
C
= 10mA
200
420
V
V
MHz
pF
f
T
C
ob
f=
100MHz
V
CB
=10V,f=
1
MHz
H
igh Diode Semiconductor
2
Typical Characteristics
Static Characteristic
10
(mA)
8
COMMON
EMITTER
T
a
=25
℃
h
FE
20uA
18uA
16uA
14uA
12uA
3000
h
FE
——
I
C
COMMON EMITTER
V
CE
= 5V
1000
T
a
=100
℃
I
C
COLLECTOR CURRENT
6
DC CURRENT GAIN
T
a
=25
℃
100
4
10uA
8uA
6uA
4uA
2
0
0
1
2
3
4
5
I
B
=2uA
6
7
10
1
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
10
I
C
(mA)
100
1000
V
BEsat
——
β=20
I
C
500
V
CEsat
β=20
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
——
I
C
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
800
T
a
=25
℃
T
a
=100
℃
100
600
T
a
=25
℃
T
a
=100
℃
400
200
0.1
1
10
100
10
0.1
1
10
100
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
100
I
C
COMMON EMITTER
V
CE
=5V
——
V
BE
500
f
T
——
I
C
(mA)
I
C
T =1
00
℃
a
10
TRANSITION FREQUENCY
f
T
COLLECTOR CURRENT
1
(MHz)
T =2
5
℃
a
100
COMMON EMITTER
V
CE
=5V
T
a
=25
℃
10
0.25
0.1
0.2
0.4
0.6
0.8
1.0
2
4
6
8
10
12
BASE-EMMITER VOLTAGE V
BE
(V)
COLLECTOR CURRENT
I
C
(mA)
100
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
250
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
200
(pF)
10
C
ib
CAPACITANCE
C
150
C
ob
1
100
50
0.1
0.1
0
1
10
30
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
H
igh Diode Semiconductor
3
SOT-23
Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
8°
SOT-23
Suggested Pad Layout
JSHD
JSHD
H
igh Diode Semiconductor
4
Reel Taping Specifications For Surface Mount Devices-SOT-23
30
H
igh Diode Semiconductor
5
全文预览
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
