MMBT5401
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
HD-ST0.42
Features
●
Complementary to MMBT5551
●
Ideal for Medium Power Amplification and Switching
Marking:
●
2L
SOT- 23
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-160
-150
-5
-600
300
416
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
B
E
C
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
h
FE(1) *
h
FE(2) *
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
*Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
*
*
Test
conditions
Min
-160
-150
-5
Typ
Max
Unit
V
V
V
I
C
=-100µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10µA, I
C
=0
V
CB
=-120V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-5V, I
C
=-1mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-50mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-5V,I
C
=-10mA, f=30MHz
V
(BR)EBO
-0.1
-0.1
80
100
50
-0.2
-0.5
-1
-1
100
300
μA
μA
V
CE(sat)1*
V
CE(sat)2
V
BE(sat)2
f
T
*
V
V
V
V
MHz
V
BE(sat)1*
*
CLASSIFICATION OF
h
FE
RANK
RANGE
L
100-200
H
200-300
H
igh Diode Semiconductor
1
Typical Characteristics
-20
-18
Static Characteristic
-100uA
-90uA
-80uA
-70uA
COMMON
EMITTER
T
a
=25
℃
h
FE
300
h
FE
—— I
C
V
CE
=-5V
T
a
=100 C
o
(mA)
-16
-14
-12
-10
-8
-6
-4
-2
-0
-0
-3
-6
250
I
C
200
COLLECTOR CURRENT
-60uA
-50uA
-40uA
-30uA
-20uA
I
B
=-10uA
-9
DC CURRENT GAIN
150
T
a
=25 C
100
o
50
0
-1
-10
-100
-600
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-1.0
V
BEsat
—— I
C
β=10
T
a
=25
℃
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
-1
V
CEsat
——
β=10
I
C
-0.8
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
-0.6
T
a
=100
℃
-0.1
T
a
=100
℃
-0.4
T
a
=25
℃
-0.2
-0.0
-0.1
-1
-10
-100
-600
-0.01
-0.1
-1
-10
-100
-600
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
-100
I
C
—— V
BE
V
CE
=-5V
100
C
ob
/ C
ib
—— V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
T
a
=25 C
o
I
C
(mA)
(pF)
Cib
COLLECTOR CURRENT
-10
CAPACITANCE
T
a
=100 C
o
C
10
-1
T
a
=25
℃
Cob
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
1
-0.5
-1
-10
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
300
f
T
—— I
C
0.4
P
c
——
T
a
(MHz)
250
COLLECTOR POWER DISSIPATION
P
c
(W)
VCE=-5V
o
T
a
=25 C
-0
-5
-10
-15
-20
-25
-30
0.3
f
T
TRANSITION FREQUENCY
200
150
0.2
100
0.1
50
0
0.0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
Ta
(
℃
)
H
igh Diode Semiconductor
2
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