S9 014
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
●
Complementary
to
S9015
Marking:
●
J6
SOT- 23
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
50
45
5
100
200
625
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
B
E
C
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
Test conditions
I
C
= 100
μ
A, I
E
=0
I
C
= 0.1mA, I
B
=0
I
E
=100
μ
A, I
C
=0
V
CB
=50 V , I
E
=0
V
CE
=35V , I
B
=0
V
EB
= 3V , I
C
=0
V
CE
=5V, I
C
= 1mA
I
C
=100 mA, I
B
= 5mA
I
C
=100 mA, I
B
= 5mA
V
CE
=5V, I
C
= 10mA
f=
30MHz
150
200
Min
50
45
5
0.1
1
0.1
1000
0.3
1
V
V
MHz
Typ
Max
Unit
V
V
V
μ
A
μ
A
μ
A
f
T
CLASSIFICATION OF
h
FE
Rank
Range
L
200-450
H
450-1000
1
H
igh Diode Semiconductor
Typical Characteristics
Static Characteristic
8
1000
h
FE
—— I
C
(mA)
20uA
6
COMMON
EMITTER
T
a
=25
℃
h
FE
T
a
=100
℃
18uA
16uA
14uA
T
a
=25
℃
I
C
COLLECTOR CURRENT
4
DC CURRENT GAIN
12uA
10uA
8uA
100
2
6uA
4uA
I
B
=2uA
COMMON EMITTER
V
CE
= 5V
8
10
0.1
1
10
100
0
0
2
4
6
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1
V
CEsat
——
I
C
2
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
1
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=25
℃
0.1
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
β=20
0.01
0.1
1
10
100
0.1
0.1
1
10
β=20
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
100
I
C
—— V
BE
1000
f
T
—— I
C
(mA)
I
C
10
T
a
=100
℃
(MHz)
100
T
a
=25
℃
1
TRANSITION FREQUENCY
COLLECTOR CURRENT
f
T
10
COMMON EMITTER
V
CE
= 5V
0.1
0.0
0.3
0.6
0.9
1.2
COMMON EMITTER
V
CE
=5V
T
a
=25
℃
1
0.1
1
10
100
BASE-EMMITER VOLTAGE V
BE
(V)
COLLECTOR CURRENT
I
C
(mA)
100
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
250
P
C
——
T
a
(pF)
C
ib
10
COLLECTOR POWER DISSIPATION
P
C
(mW)
20
200
CAPACITANCE
C
150
C
ob
1
100
50
0.1
0.1
0
0
25
50
75
100
125
150
1
10
REVERSE VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
H
igh Diode Semiconductor
2
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