FMD5N50E5
Silicon N-Channel Power MOSFET
General Description：
FMD5N50E5, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-252, which accords
with the RoHS standard.
V
DSS
I
D
Trr
R
DS(ON)Typ
500
5
85
1.25
V
A
ns
Ω
Features
：
Fast body diode eliminates the need for external
diode in ZVS applications.
Lower Gate charge results in simpler drive
requirements
Higher Gate voltage threshold offers improved noise
immunity
Applications：
Motor Control applications
Uninterruptible Power Supplies
Zero Voltage Switching SMPS
Absolute
(Tc=25°
unless otherwise specified)
C
Symbol
V
DSS
I
D
I
DMa1
V
GS
E
ASa2
E
ARa1
I
ARa1
dv/dt
a3
P
D
T
J
,T
stg
T
L
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °
C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°
C
Operating Junction and Storage Temperature
Range
MaximumTemperature for Soldering
Rating
500
5
2.9
20
±
30
350
31
2.5
5.0
75
0.60
150,–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/°
C
°
C
°
C
Rev1.0
-
1
-
FMD5N50E5
Electrical Characteristics
(Tc=
25° unless otherwise specified)
C
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
Parameter
Drain to Source Breakdown
Voltage
Bvdss Temperature Coefficient
Test Conditions
Min.
V
GS
=0V, I
D
=250µA
Rating
Typ.
--
0.55
--
--
--
--
Max.
--
--
1
10
100
-100
500
--
--
--
--
--
Un
its
V
V/
°
C
µA
µA
nA
nA
ID=250uA,Reference25°
C
V
DS
=500V, V
GS
= 0V,
T
a
= 25°
C
V
DS
=400V, V
GS
= 0V,
T
a
= 125°
C
V
GS
= 30V
V
GS
=-30V
I
DSS
I
GSS(F)
I
GSS(R)
Drain to Source Leakage
Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=2.5A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min. Typ.
--
1.25
--
3.0
Max.
1.5
5.0
Units
Ω
V
Pulse width tp
≤
380µs, δ
≤
2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0 V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
DS
=15V, I
D
=2.5A
Rating
Min.
--
--
--
--
Typ.
5.0
775
79
9.5
Max.
--
--
--
--
Units
S
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
ID = 5A VDD =250V
VGS = 10V
ID =5A VDD = 250V
RG =25Ω
Test Conditions
Min.
--
--
--
--
--
--
--
Rating
Typ.
12
46
50
48
19
4.0
8.0
Max.
--
--
--
--
Units
ns
nC
Rev1.0
-
2
-
FMD5N50E5
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body
Diode)
Maximum Pulsed Current (Body
Diode)Forward Voltage
Diode
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Min.
--
--
I
S
=5.0A,V
GS
=0V
I
S
=5.0A,T
j
= 25°
C
dI
F
/dt=100A/us,
V
GS
=0V
Rating
Typ.
--
--
--
85
265
Max.
5
20
1.5
--
--
Units
A
A
V
ns
nC
--
--
--
Pulse width tp
≤
380µs,
δ
≤
2%
Symbol
R
θJC
R
θJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
1.67
62.5
Units
℃/W
℃/W
a1
Repetitive rating; pulse width limited by maximum junction temperature
a2
L=10mH, I
D
=8A, Start T
J
=25℃
a3
I
SD
=5A,di/dt
≤
100A/us,V
DD
≤
BV
DS
, Start T
J
=25
℃
Rev1.0
-
3
-
FMD5N50E5
Characteristics Curve
100
80
PD , Power Dissipation
,Watts
70
60
50
40
30
20
10
Id , Drain Current , Amps
10
1ms
1
OPERATION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
T
J
=MAX RATED
T
C
=25° Single Pulse
C
10ms
100ms
DC
0 .1
0 .0 1
1
0
10
100
V d s , D ra in -to -S o u rc e V o lta g e , V o lts
1000
0
25
75
100
50
TC , Case Temperature ,
°
C
125
150
Figure 1 Maximun Forward Bias Safe Operating Area
6
Id , Drain Current , Amps
5
Id , Drain Current , Amps
Figure 2 Maximun Power Dissipation vs Case Temperature
6
PULSE DURATION=10
µ
s
DUTY FACTOR=0.5%MAX
Tc =25°
C
4.5
V
GS
=15V
4
3
2
1
0
0
25
75
1 00
125
50
TC , C a se Te m p e ra tu re ,
°
C
1 50
V
GS
=7V
3
V
GS
=6.5V
V
GS
=6V
1.5
V
GS
=4.5V
V
GS
=5.5V
0
0
5
10
15
20
Vds , Drain-to-Source Voltage , Volts
25
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
Thermal Impedance, Normalized
50%
20%
Figure 4 Typical Output Characteristics
0.1
10%
5%
2%
P
DM
0.01
Single pulse
t1
t2
1%
NOTES
DUTY FACTOR D=t1/ t2
PEAK Tj=P
DM
*Z
thJC
*R
thJC
+T
C
0.001
0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration,Seconds
0.1
1
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
Rev1.0
-
4
-
FD5N50E5
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25° DERATE
C
PEAK CURRENT AS
FOLLOWS:
Idm , Peak Current , Amps
150
T
C
I
½
I
25
125
10
1
1.00E-05
1.00E-04
1.00E-03
1.00E-02
t
,
Pulse Width , Seconds
1.00E-01
1.00E+00
1.00E+01
9
Id , Drain Current , Amps
7.5
6
4.5
3
1.5
0
2
3
-55°
C
+25°
C
+150°
C
PULSE DURATION = 10
µ
s
DUTY CYCLE = 0.5%MAX
V
DS
=30V
Figure 6 Maximun Peak Current Capability
6
Rds(on), Drain to Source ON
Resistance , Ohms
5
4
3
2
1
0
4
5
Vgs , Gate to Source Voltage , Volts
6
PULSE DURATION = 10
µ
s
DUTY FACTOR = 0.5%MAX
Tc =25°
C
I
D
= 5A
I
D
= 2.5A
I
D
= 1.25A
4
6
8
10
12
Vgs , Gate to Source Voltage
,
Volts
14
Figure 7 Typical Transfer Characteristics
3
Rds(on), Drain to Source ON
Resistance, Ohms
PULSE DURATION = 10
µ
s
DUTY CYCLE= 0.5%MAX
Tc =25°
C
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
Rds(on), Drain to Source ON Resistance,
Nomalized
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0.5
PULSE DURATION = 10
µ
s
DUTY CYCLE= 0.5%MAX
VGS=10V ID=2.5A
2.5
2
V
GS
=20V
1.5
1
0
1
2
3
Id , Drain Current , Amps
4
-50
0
50
100
Tj, Junction temperature , C
150
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
Rev1.0
-
5
-
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