N
沟道增强型场效应晶½管
N-CHANNEL MOSFET
FHF20N60A/ FHP20N60A/FHA20N60A
主要参数
MAIN CHARACTERISTICS
ID
VDSS
Rdson-typ @Vgs=10V)
(
P
D
(T
C
=25℃)
20A
600V
0.32Ω
85W
产品特性
FEATURES
½栅极电荷
½
Crss (典型值 20pF)
开关速度快
100%经过雪崩测试
高抗
dv/dt
½力
RoHS
产品
Low gate charge
Low Crss (typical 20pF )
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
用途
APPLICATION
高频开关电源
High efficiency switch
mode power supplies
电子镇流器
LED
电源
Electronic ballast
LED power supply
封装½式
Package
等效电路
Equivalent Circuit
TO-220
FHP
系列
TO-220F
FHF
系列
TO-3PN
FHA
系列
数值
Value
FHF20N60A
FHP20N60A
600
20*
14*
80*
±
30
1200
4.5
100
5.0
62.2
0.5
85
0.68
150,–55 to 150
272
2.17
FHA20N60A
绝对最大额定值
ABSOLUTE RATINGS (Tc=25℃)
项目
Parameter
最高漏极-源极直流电压
Drain-Source Voltage
连续漏极电流*
Drain Current -continuous *
最大脉冲漏极电流(注
1)
Drain Current – pulse(note 1)
最高栅源电压
Gate-Source Voltage
单脉冲雪崩½量(注
2)
Single Pulsed Avalanche Energy(note 2)
雪崩电流(注
1)
Avalanche Current(note 1)
重复雪崩½量(注
1)
Repetitive Avalanche Current(note 1)
二极管反向恢复最大电压变化速率(注
3)
Peak Diode Recovery dv/dt(note 3)
耗散功率
Power Dissipation
最高结温及存储温度
Operating and Storage Temperature Range
引线最高焊接温度
Maximum Lead Temperature for Soldering
Purposes
符号
Symbol
VDS
ID(TC=25℃)
ID(TC=100℃)
IDM
VGS
EAS
IAR
EAR
dv/dt
PD(TC=25℃)
单½
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
-Derate above 25℃
TJ,TSTG
TL
300
℃
*漏极电流由最高结温限制
Drain current limited by maximum junction temperature
1
Ver-1.0
电特性
ELECTRICAL CHARACTERISTICS
项目
Parameter
关态特性
Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
击穿电压温度特性
Breakdown Voltage
Temperature Coefficient
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
栅极½漏电流
Gate-body leakage current
通态特性
On-Characteristics
阈值电压
Gate Threshold Voltage
静态导通电阻
Static Drain-Source On-Resistance
动态特性
Dynamic Characteristics
输入电容
Ciss
Input capacitance
VDS=25V,
输出电容
Coss
VGS =0V,
Output capacitance
f=1.0MHz
反向传输电容
Crss
Reverse transfer capacitance
开关特性
Switching Characteristics
延迟时间
td(on)
Turn-On delay time
VDS=300V,
上升时间
tr
ID=20A,
Turn-On rise time
RG=25Ω
延迟时间
td(off)
(note
4,5)
Turn-Off delay time
下降时间
tf
Turn-Off Fall time
栅极电荷总量
Qg
Total Gate Charge
VDS =300V ,
ID=20A ,
栅-源电荷
Qgs
VGS =10V
Gate-Source charge
(note
4,5)
栅-漏电荷
Qgd
Gate-Drain charge
漏-源二极管特性及最大额定值
Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain -Source
IS
Diode Forward Current
正向最大脉冲电流
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
正向压降
VSD
VGS=0V, IS=20A
Drain-Source Diode Forward Voltage
反向恢复时间
trr
VGS=0V,
Reverse recovery time
IS=20A ,dIF/dt=100A/μs (note
反向恢复电荷
4)
Qrr
Reverse recovery charge
-
-
-
2847
252
20
-
-
-
pF
VGS(th)
RDS(ON)
VDS = VGS , ID=250μA
VGS =10V , ID=10A
2.0
-
-
0.32
4.0
0.4
V
Ω
BVDSS
ΔBVDSS/Δ TJ
IDSS
IGSS(F/R)
ID=250μA, VGS=0V
ID=250μA, referenced to 25℃
VDS=600V,VGS=0V, TC=25℃
VDS=480V, TC=125℃
VDS=0V, VGS =±30V
600
-
-
-
-
-
0.65
-
-
-
-
-
1.0
100
±
100
V
V/℃
μA
μA
μA
符号
Symbol
测试条件
Tests conditions
最小
Min
典型
Typ
最大
Max
单½
Units
-
-
-
-
-
-
-
36
73
166
73
60
14
24
-
-
-
-
-
-
-
ns
ns
ns
ns
nC
nC
nC
-
-
20
A
-
-
-
-
-
-
425
3.7
80
1.5
-
-
A
V
ns
μC
2
Ver-1.0
热特性
THERMAL CHARACTERISTIC
项目
Parameter
结到管壳的热阻
Thermal Resistance, Junction to Case
结到环境的热阻
Thermal Resistance, Junction to Ambient
注释:
Notes:
1:脉冲½度由最高结温限制
2:L=10mH, I
AS
=15.5A, V
DD
=48V, R
G
=25 Ω,起始结温 T
J
=25℃
3:I
SD
≤20A,di/dt ≤100A/μs,V
DD
≤B
VDSS
,起始结温 T
J
=25℃
4:脉冲测试:脉冲½度 ≤300μs,占空比≤2%
5:基本与工½温度无关
Rth(j-A)
62.5
62.5
40
Rth(j-c)
1.47
0.5
0.5
符号
Symbol
FHF20N60A
FHP20N60A
FHA20N60A
单½
Unit
℃/W
℃/W
1:Pulse width limited by maximum junction temperature
2:L=10mH, ID=15.5A, V
DD
=48V, R
G
=25 Ω ,Start TJ=25℃.
3:ISD ≤20A,di/dt ≤100A/μs,VDD≤BVDSS, Starting TJ=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperatur
3
Ver-1.0
特性曲线
ELECTRICAL CHARACTERISTICS (curves)
4
Ver-1.0
特性曲线
ELECTRICAL CHARACTERISTICS (curves)
5
Ver-1.0