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Typical Performance Characteristics
80
I
D
,Drain Current[A]
10
I
D
,Drain Current[A]
V
GS
=
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
100
15 C
o
10
25 C
*Notes:
1. V
DS
= 20V
2. 250
P
s Pulse Test
o
1
0.5
0.1
*Notes:
1. 250
P
s Pulse Test
2. T
C
= 25 C
o
1
10
1
V
DS
,Drain-Source Voltage[V]
V
GS
,Gate-Source Voltage[V]
Figure 1. On-Region Characteristics
0.8
0.7
R
DS(ON)
[
:
]
,
Drain-Source On-Resistance
Figure 2. Transfer Characteristics
100
0.6
0.5
0.4
0.3
0.2
0.1
0
*Note: T
J
= 25 C
o
I
S
, Reverse Drain Current [A]
10
15 C
25 C
o
o
V
GS
= 10V
V
GS
= 20V
1
*Notes:
1. V
GS
= 0V
25
50
I
D
, Drain Current [A]
75
0.2
0.0
2. 250
P
s Pulse Test
0.5
1.0
V
SD
, Body Diode Forward Voltage [V]
1.5
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
6000
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
10
V
GS
, Gate-Source Voltage [V]
V
DS
= 100V
V
DS
= 250V
V
DS
= 400V
Ciss = Cgs + Cgd
(
Cds = shorted
)
Coss = Cds + Cgd
Crss = Cgd
4500
Capacitances [pF]
C
oss
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
iss
8
6
3000
4
1500
C
rss
2
*Note: I
D
= 20A
0
0.1
1
10
V
DS
, Drain-Source Voltage [V]
50
0
0
10
20
30
40
50
Q
g
, Total Gate Charge [nC]
60
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Typical Performance Characteristics
(Continued)
1.2
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
200
100
10
P
s
100
P
s
1 ms
10 ms
100 ms
Operation in This Area
is Limited by R
DS(on)
DC
I
D
, Drain Current [A]
1.1
10
1.0
1
0.9
*Notes:
1. V
GS
= 0V
2. I
D
= 1mA
0.1
*Notes:
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
0.8
-100
0.01
-50
0
50
100
150
o
T
J
, Junction Temperature
[
C
]
200
1
10
100
V
DS
, Drain-Source Voltage [V]
800
Figure 7. Breakdown Voltage Variation
vs. Temperature
200
100
40
P
s
100
P
s
Figure 8. Maximum Safe Operating Area
- FHP20N50A
25
I
D
, Drain Current [A]
20
I
D
, Drain Current [A]
800
10
1ms
10ms
15
1
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
10
0.1
DC
5
0.01
1
10
100
V
DS
, Drain-Source Voltage [V]
0
25
50
75
100
125
o
T
C
, Case Temperature
[
C
]
150
Figure 9. Maximum Safe Operating Area
- FHF20N50A
1
Thermal Response
[
Z
T
JC
]
Figure 10. Maximum Drain Current
vs. Case Temperature
0.5
0.1
0.2
0.1
0.05
0.02
P
DM
P
D
M
t
1
t
2
t
1
t
2
0.01
0.01
single pulse
*Notes:
1. Z
T
JC
(t) = 0.5 C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
T
JC
(t)
o
0.002
-5
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve - FHP20N50A
Microchip MCU
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