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Typical Characteristics
Power Dissipation
120
100
35
30
Drain Current
P
D
- Power (W)
80
60
40
20
0
0
25
50
75
100
125
150
175
-I
D
- Drain Current (A)
25
20
15
10
5
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (
C)
R
DS(ON)
- On - Resistance (m )
100
T
J
- Junction Temperature (
C)
1000
Safe Operation Area
R
DS(ON)
limited
Drain Current
Ids=-35A
80
-I
D
- Drain Current (A)
100
10
1
DC
10μs
100μs
1ms
10ms
60
40
0.1
20
0.01
0.01
T
C
=25°C
0.1
1
10
100
1000
0
0
1
2
3
4
5
6
7
8
9
10
-V
DS
- Drain-Source Voltage (V)
-V
GS
- Gate-Source Voltage (V)
Thermal Transient Impedance
ZthJC - Thermal Response (°C/W)
100
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
10
1
0.1
Single Pulse
R
JC
=
1.45°C/W
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
Typical Characteristics
Output Characteristics
100
100
Drain-Source On Resistance
-I
D
- Drain Current (A)
-10 8V 7V
80
R
DS(ON)
- On Resistance (m )
80
60
60
-5V
40
40
-3V
20
20
0
0
1
2
3
4
5
0
0
20
40
60
80
100
-V
DS
- Drain-Source Voltage (V)
2.5
-I
D
- Drain Current (A)
100
Drain-Source On Resistance
V
GS
=-10V
I
DS
=-35A
Source-Drain Diode Forward
Normalized On Resistance
-I
S
- Source Current (A)
2.0
10
1.5
T
J
=175°C
1
1.0
T
J
=25°C
0.5
T
J
=25°C
Rds(on)=30m
0.0
-50
-25
0
25
50
75
100
125
150
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
T
J
- Junction Temperature (
C)
-V
SD
- Source-Drain Voltage (V)
Capacitance
-V
GS
- Gate-Source Voltage (V)
6000
10
9
8
7
6
5
4
3
2
1
0
0
20
Gate Charge
VDS=-80V
IDS=-35A
C - Capacitance (pF)
5000
4000
Frequency=1.0MHz
Ciss
3000
2000
1000
0
1
Coss
Crss
10
100
-V
DS
- Drain-Source Voltage (V)
40
60
80
Q
G
- Gate Charge (nC)
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