BG150B12UY3-I
BYD Microelectronics Co., Ltd.
IGBT Power Module
V
CE
=1200V
I
C
=150A
General Description
BYD IGBT Power Module BG150B12UY3-I provides fast
switching characteristic as well as high short circuit
capability, which introduce the advanced IGBT chip/FWD
and improved connection.
Features
High speed IGBT in trench/field stop technology
Including ultra fast & soft recovery anti-parallel FWD
Low inductance
Standard package
High short circuit capability
Fast switching and short tail current
Applications
High frequency drivers
AC motor control
Inverters
Servo
UPS (Uninterruptible Power Supplies)
Electric welding
Characteristic values
Parameter
Collector-emitter voltage
Continuous collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
IGBT short circuit SOA
Max. junction temperature
Operation junction temperature
Storage temperature range
Diode DC forward current
Peak forward current
I
2
t-value, Diode
Isolation voltage
Datasheet
Symbol
Conditions
Temperature
Value
Unit
Absolute Maximum Ratings
V
CES
I
C
I
CRM
V
GES
P
tot
t
psc
T
vj max
T
vj op
T
stg
I
F
I
FRM
I
2
t
V
isol
I
C
=6mA,V
GE
=0V
—
I
CRM
=2I
C
—
per switch (IGBT)
V
CC
=600V, V
GE
≤15V
V
CEM
≤1200V
—
—
—
—
I
FRM
=2I
F
V
R
=0V,t=10ms
t=1min,f=50Hz
WI-D06-J-0000
Rev.A/0
T
vj
=25℃
T
c
=80℃
—
—
T
c
= 25 ° C
T
vj
≤125℃
—
—
—
T
c
=80℃
—
T
j
=125℃
—
1200
150
300
+/-20
tbd
10
150
-40~150
-40~125
150
300
—
2500
V
A
A
V
W
us
℃
℃
℃
A
A
A
2
s
V
Page 1 of 8
BYD Microelectronics Co., Ltd.
BG150B12UY3-I
Parameter
IGBT
Gate-emitter threshold voltage
Collector-emitter cut-off current
Gate-emitter cut-off current
Collector-emitter
saturation voltage
Integrated gate resistor
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Symbol
Conditions
Temperature
Value
Unit
Characteristics
min.
V
GE(th)
I
CES
I
GES
V
CE(sat)
R
Gint
Q
g
Q
ge
Q
gc
C
ies
C
oes
C
res
t
d(on)
V
CC
=600V,Ic=150A,
R
Gon
=R
Goff=
3.3Ω,
V
GE
=± 15V,
Turn-off delay time
t
d(off)
L
σ
=80nH,
Inductive load
I
C
=6mA ,V
GE
=V
CE
V
CE
=1200V,V
GE
=0V
V
CE
=0V,V
GE
=±20V
Ic=150A,V
GE
=15V
—
V
CE
=600V,Ic=150A,
V
GE
=± 15V
V
CE
=25V,V
GE
=0V,
f=1MHz
T
vj
=25℃
T
vj
=25℃
T
vj
=125℃
T
vj
=25℃
T
vj
=25℃
T
vj
=125℃
T
vj
=25℃
—
—
—
—
T
vj
=25℃
T
vj
=25℃
T
vj
=125℃
T
vj
=25℃
T
vj
=125℃
T
vj
=25℃
T
vj
=125℃
T
vj
=25℃
T
vj
=125℃
V
CC
=600V,Ic=150A,
Energy dissipation during turn-on
time
E
on
R
Gon
=3.3Ω,V
GE
=± 15V
L
σ
=80nH,
Inductive load
V
CC
=600V,Ic=150A,
Energy dissipation during turn-off
time
E
off
R
Goff
=3.3Ω,V
GE
=± 15V
L
σ
=80nH,
Inductive load
T
vj
=25℃
T
vj
=125℃
T
vj
=25℃
T
vj
=125℃
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
—
—
-300
—
—
—
typ.
5.5
—
—
—
2.6
3.4
—
tbd
tbd
tbd
tbd
tbd
tbd
283
300
145
51
34
375
48
166
7.0
14.4
6.5
9.0
max.
6.5
1.0
10
300
—
—
—
V
mA
mA
nA
V
V
Ω
uC
uC
uC
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
nF
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
t
r
Fall time
t
f
Diode
Forward voltage
Peak reverse recovery current
Recovered charge
Reverse recovery time
Reverse recovery energy
Datasheet
min.
V
F
I
RR
Q
rr
t
rr
E
rec
WI-D06-J-0000
Rev.A/0
typ.
1.7
1.7
210
26.4
299
14.0
max.
—
—
—
—
—
—
V
V
A
uC
ns
mJ
I
F
=150A
T
vj
=25℃
T
vj
=125℃
T
vj
=125℃
—
—
—
—
—
—
I
F
=150A,V
R
=600V,
di
F
/dt=1100A/us
T
vj
=125℃
T
vj
=125℃
T
vj
=125℃
Page 2 of 8
BYD Microelectronics Co., Ltd.
BG150B12UY3-I
Parameter
Symbol
Conditions
min.
typ.
Max.
Unit
Thermal-Mechanical Specifications
IGBT thermal resistance junction to
case
Diode thermal resistance junction to
case
Thermal resistance case to
heat-sink
Dimensions
R
th(j-c)
R
th(j-c)
per IGBT
per diode
—
—
tbd
tbd
—
—
K/W
K/W
R
th(c-s)
per module
—
0.03
—
K/W
LxWxH
Typical , see outline drawing
according to IEC
Term. to base:
Term. to term:
Term. to base:
Term. to term:
—
106.4 x 61.4 x 31.5
—
6.0
—
—
—
—
—
24
14
320
28.3
—
—
—
—
mm
Clearance distance in air
da
60664-1 and EN
50124-1
according to IEC
mm
Surface creepage distance
Mass
ds
m
60664-1and EN
50124-1
—
mm
g
Thermal and mechanical properties according to IEC 60747 – 15
Specification according to the valid application note
.
Datasheet
WI-D06-J-0000
Rev.A/0
Page 3 of 8
BYD Microelectronics Co., Ltd.
BG150B12UY3-I
Characterization curves
300
300
V
GE
=15V
240
240
V
CE
=20V
tp=10us
180
180
I
C
[A]
I
C
[A]
Tvj=25℃
Tvj=125
120
Tvj=125℃
60
120
60
Tvj=25℃
0
0
1
2
3
V
CE
[V]
4
5
6
0
5
6
7
8
V
GE
[V]
9
10
11
Fig.1 Typ. On-state Characteristics
Fig.2 Typ. Transfer Characteristics
300
40
T
vj
=125℃
V
GE
=17V
240
V
GE
=13V
V
GE
=15V
180
E[mJ]
30
V
cc
=600V
V
GE
=15V
R
g
=3.3Ω
L=80nH
Eon
Tvj=25℃
Tvj=125℃
I
C
[A]
V
GE
=11V
20
Eoff
120
V
GE
=9V
10
60
0
0
1
2
3
4
V
CE
[V]
5
6
7
8
0
0
60
120
180
I
C
[A]
240
300
Fig.3 Typ. Output Characteristics
Fig.4 Switching Loss vs. Collector Current
Datasheet
WI-D06-J-0000
Rev.A/0
Page 4 of 8
BYD Microelectronics Co., Ltd.
BG150B12UY3-I
600
Vcc=600V
V
GE
=15V
R
g
=3.3Ω
Tvj=125℃
tdoff
300
500
240
400
180
300
I
F
[A]
t[ns]
tdon
120
200
tf
60
Tvj=125℃
Tvj=25℃
100
tr
0
0
80
160
I
C
[A]
240
320
0
0
0.5
1
1.5
V
F
[V]
2
2.5
3
Fig.5 Typ. Switching Times vs. Ic
Fig.6 FWD Forward Characteristics
20
200
Vcc=600V
V
GE
=15V
R
g
=3.3Ω
Tj=150℃
V
GE
=15V
150
Tvj=125℃
16
Erec[mJ]
12
8
Tvj=25℃
4
I
C
[A]
0
0
60
120
180
I
F
[A]
240
300
100
50
0
0
40
80
120
T
C
[℃]
160
200
Fig.7 Typ. Switching Losses Diode-inverter
Fig. 8 Rate Current vs. Temperature（Tc）
Datasheet
WI-D06-J-0000
Rev.A/0
Page 5 of 8
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