ESD5B5.0ST1G-N
ESD Protection Diode
»
Features
■
■
■
■
■
■
■
■
75Watts peak pulse power (tp = 8/20μs)
Bidirectional configurations
Solid-state silicon-avalanche technology
Low clamping voltage
Low leakage current
IEC 61000-4-2 ±25kV contact ±25kVair
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 5A (8/20μs)
»
Applications
■
■
■
■
■
»
Mechanical Data
■
■
■
■
Microprocessor based equipment
Personal Digital Assistants (PDA’s)
Notebooks, Desktops, and Servers
Portable Instrumentation
Pagers Peripherals
SOD523 package
Molding compound flammability rating: UL 94V-0
Packaging: Tape and Reel
RoHS/WEEE Compliant
»
Schematic & PIN Configuration
SOD-523
Revision 2018
www.born-tw.com
1/4
ESD5B5.0ST1G-N
»
Absolute Maximum Rating
Rating
Peak Pulse Power ( t
p
=8/20μs)
Peak Pulse Current ( t
p
=8/20μs ) (note1)
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
Lead Soldering Temperature
Junction Temperature
Storage Temperature
Symbol
P
PP
I
pp
V
ESD
T
L
T
J
T
stg
Value
75
5
25
25
260(10seconds)
-55 to + 150
-55 to + 150
Units
Watts
A
kV
℃
℃
℃
»
Electrical Characteristics
Parameter
Reverse Stand-OffVoltage
Reverse BreakdownVoltage
Reverse LeakageCurrent
Clamping Voltage
Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
j
Conditions
Min
Typical
Max
5.0
Units
V
V
I
T
=1mA
V
RWM
=5V,T=25℃
I
PP
=5A,t
p
=8/20μs
V
R
= 0V, f =1MHz
6.0
0.2
15
8
10
uA
V
pF
»
Electrical Parameters (TA = 25°C unless otherwisenoted)
Symbol
I
PP
V
C
V
RW M
I
R
V
BR
I
T
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @
I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @
V
RWM
Breakdown Voltage @
I
T
Test Current
V
C
V
BR
V
RWM
I
T
I
R
I
PP
I
I
I
T R
V
RWM
V
BR
V
C
V
I
PP
Note:.
8/20μs
pulsewaveform.
Revision 2018
www.born-tw.com
2/4
ESD5B5.0ST1G-N
»
Typical Characteristics
Figure 1: Peak Pulse Power vs. Pulse Time
10
Figure 2: Power Derating Curve
110
100
Percent of Rated Power for I
pp
1,000
Ppp
–
Peak Pulse Power - Ppp(KW)
90
80
70
60
50
40
30
20
10
0
1
75w 8/20μs waveform
0.1
0.01
0.1
1
10
td
–
Pulse Duration - µs
100
0
25
Ambient Temperature - T
A
(℃)
50
75
100
125
150
Figure3:
Pulse Waveform
110
100
90
80
Figure 4: Clamping Voltage vs.Ipp
45
40
Clamping Voltage–V
C
(V)
Waveform
Paramters
tr=8µs
td=20µs
e
-1
35
30
25
20
15
10
5
0
1
2
70
60
50
40
30
20
10
0
0
5
Test
Waveform
Paramters
tr=8µs
td=20µs
Percent
I
pp
td=Ipp/2
10
Time (µs)
15
20
25
30
3
4
5
Peak Pulse Current–I
PP
(A)
Revision 2018
www.born-tw.com
3/4
ESD5B5.0ST1G-N
»
Outline Drawing – SOD523
D
-X-
-Y-
1
b 2x
0.08 (0.0032)
X
Y
2
E
SYMBOL
A
b
C
D
E
H
E
L
DIMENSIONS
MILLIMETER
MIN
0.50
0.25
0.07
1.10
0.70
1.50
0.15
MAX
0.70
0.35
0.20
1.30
0.90
1.70
0.25
INCHES
MIN
0.020
0.010
0.0028
0.043
0.028
0.059
0.006
MAX
0.028
0.014
0.0079
0.051
0.035
0.067
0.010
A
C
H
E
L
»
Marking
1
5XB
2
»
Ordering information
Order code
ESD5B5.0ST1G-N
Package
SOD523
Base qty
5000
Delivery mode
Tape and reel
Revision 2018
www.born-tw.com
4/4
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
