BEPxxxxSC
Features
◆
Bi-directional crowbar transient voltage protection
◆
High surge capability
◆
High off-state impedance
◆
Low leakage current
◆
Low on-state voltage
◆
Short-circuit failure mode
DO-214AA(SMB)
Main Application
BORN’s thyristor surge protector devices are desi to help protect sensitive telecommunication
gned
equipment from the hazards caused by lighning ,power contact,and power induction. These devices
enable equipment to comply with various regulatory requirements including GR 1089,ITU
K.20,K.21and K.45,IEC 60950,UL 60950,and TIA-968-A(formerly known as FCC Part 68).
Typical application including:
●
Central office switching equipment. Analog and digital linecards(xDSL,T1/E1,ISDN……)
●
Customer Premises Equipment(CPE)such as phones, fax machines,modems,POS terminals,
●
●
●
●
●
PBX systems and caller ID adjunct boxes.
Primary protection modules including Main Distribution Frames(MDF),building
entrance equipment and station protection modules.
Access
network
equipment
such
as
remote
terminals,line
repeaters,multiplexers,cross-connects,WAN
equipment,Network
Interface
Devices(NID).
Data lines and security systems.
CATV line amplifiers and power inserters.
Sprinkler systems.
Electrcal Parameters (Tamb=25℃)
V
DRM
Part
Number
Min.
V
BEP0080SC
BEP0300SC
BEP0640SC
BEP0720SC
BEP0900SC
BEP1100SC
6
25
58
65
75
90
I
DRM
Max.
uA
5
5
5
5
5
5
V
BO
Max.
V
25
40
77
88
98
130
I
BO
Max.
mA
800
800
800
800
800
800
Page 1 of 4
V
T
Max.
V
4
4
4
4
4
4
I
T
Max.
A
2.2
2.2
2.2
2.2
2.2
2.2
C
O
Max.
pF
100
100
85
85
70
70
`I
H
Min.
mA
50
50
150
150
150
150
BEPxxxxSC
V
DRM
Part
Number
Min.
V
BEP1300SC
BEP1500SC
BEP1800SC
BEP2000SC
BEP2300SC
BEP2600SC
BEP3100SC
BEP3500SC
BEP3800SC
BEP4200SC
120
140
170
180
190
220
275
320
360
400
I
DRM
Max.
uA
5
5
5
5
5
5
5
5
5
5
V
BO
Max.
V
160
180
220
220
260
300
350
400
460
540
I
BO
Max.
mA
800
800
800
800
800
800
800
800
800
800
V
T
Max.
V
4
4
4
4
4
4
4
4
4
4
I
T
Max.
A
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
C
O
Max.
pF
70
55
55
55
50
50
45
35
35
35
`I
H
Min.
mA
150
150
150
150
150
150
150
150
150
150
Eletrical Characteristics
V
DRM
V
BO
C
O
Stand-off voltage,is measured at IDRM
Breakover voltage,is measured at 100V/
μs.
Off-state capacitance ismeasured in V
DC
=2V@1M
HZ
.
I
H
I
BO
I
T
V
T
Holding current.
Breadover current.
ON-state current
On-state voltage.
I
DRM
Leakage current,is measured at VDRM.
Part Numbering System
BEP
(A)
XXXX
(B)
S
(C)
C
(D)
(A) SH’s Semiconductor Surge Arrester
(B) Series:0080,0300…3500,3800,4200etc.
(C) Pake:SMB(DO-214AA)
(D) Rating Sure Voltage:C:6KV(10/700
μs
)
Page 2 of 4
BEPxxxxSC
Electrical Characteristics Curves
Figure1 V-I Characteristics
Figure2 tr x td Pulse Wave-form
Figure 3 Normalized V
S
Change versus
Junction Temperature
Figure 4 Normalized DC Holding Current
Thermal Considerations
Package
DO-214AA/SMB
Symbol
T
J
T
S
R
θJA
Parameter
Operating Junction Temperature
Storage Temperature Range
Junction to Ambient on printed circuit
Page 3 of 4
Value
-40 to +150
-40 to +150
90
Unit
℃
℃
℃
/W
BEPxxxxSC
Solder Reflow Recommendations
●Recommended
reflow methods: IR, vapor
phase oven, hot air oven, wave solder.
●The
device can be exposed to a maximum
temperature of 265°C for 10 seconds.
●Devices
can be cleaned using standard
industry methods and solvents.
Notes:
If reflow temperatures exceed the
recommended
profile,
devices may
not meet the performance requirements.
Product Dimensions
B
Dimension
A
B
C
D
E
F
G
H
J
K
L
Inches
M
IN
0.134
0.205
0.075
0.166
0.036
0.073
0.002
0.077
0.043
0.008
0.039
M
AX
0.155
0.22
0.083
0.185
0.056
0.087
0.008
0.094
0.053
0.014
0.049
Millimeters
M
IN
3.40
5.21
1.90
4.22
0.91
1.85
0.05
1.95
1.09
0.20
0.99
M
AX
3.94
5.59
2.11
4.70
1.42
2.2
0.20
2.40
1.35
0.35
1.24
.079
(2.0)
E
D
C
A
H
F
L
J
.079
(2.0)
0.110
(2.8)
K
G
Page 4 of 4
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