SI2301S
MOSFET
SOT-23
-
P-Channel Enhancement-Mode MOSFET
Features
ROHS
•
Low R
DS(on)
@V
GS
=-4.5V
• -3.3V Logic Level Control
• P Channel SOT23 Package
• Pb−Free, RoHS Compliant
V
(BR)DSS
R
DS(ON)
Typ
125mΩ @ 4.5V
I
D
Max
Applications
• High-side Load Switch
• Switching Circuits
• High Speed line Driver
-20V
140mΩ @ 3.3V
Order Information
Product
SI2301S
Package
SOT23
-2.3A
Marking
A1sHB
Packing
3000PCS/Reel
Min Unit Quantity
3000PCS
Absolute Maximum Ratings
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above
the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions
may affect device reliability.
Symbol
Parameter
Rating
Unit
Common Ratings (T
A
=25° Unless Otherwise Noted)
C
V
GS
Gate-Source Voltage
Drain-Source Breakdown Voltage
Maximum Junction Temperature
Storage Temperature Range
±
10
-20
150
-50 to 150
V
V
°
C
°
C
V
(BR)DSS
T
J
T
STG
Mounted on Large Heat Sink
I
DM
Pulse Drain Current Tested①
C
T
A
=25°
C
T
A
=25°
-9
-2.3
A
C
T
A
=70°
C
T
A
=25°
-1.8
1
W
C
T
A
=70°
0.8
125
°
C/W
A
I
D
Continuous Drain Current
P
D
Maximum Power Dissipation
R
JA
Thermal Resistance Junction-Ambient
Rev 8: Nov 2018
www.born-tw.com
Page 1 of 4
SI2301S
MOSFET
P-Channel Enhancement-Mode MOSFET
Parameter
Condition
Min
Typ
Max
ROHS
Symbol
Unit
Static Electrical Characteristics @ T
J
= 25° (unless otherwise stated)
C
V
(BR)DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(T
A
=25℃)
V
GS
=0V I
D
=-250μA
V
DS
=-20V, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
=±
10V, V
DS
=0V
V
DS
=V
GS
, I
D
=-250μA
V
GS
=-4.5V, I
D
=-2A
V
GS
=-3.3V, I
D
=-1A
V
GS
=-2.5V, I
D
=-1A
-20
--
--
--
-0.4
--
--
--
--
--
--
--
-0.6
125
140
170
--
-1
-100
±
100
-1.0
140
170
210
V
μA
uA
nA
V
mΩ
mΩ
mΩ
I
DSS
Zero Gate Voltage Drain Current(T
A
=125℃)
I
GSS
V
GS(TH)
R
DS(ON)
R
DS(ON)
R
DS(ON)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance②
Drain-Source On-State Resistance②
Drain-Source On-State Resistance②
Dynamic Electrical Characteristics @ T
J
= 25° (unless otherwise stated)
C
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
DS
=-10V
Gate Source Charge
Gate Drain Charge
I
D
=-2A,
V
GS
=-4.5V
V
DS
=-10V, V
GS
=0V,
f=1MHz
--
--
--
--
--
--
177
30
25
5.3
0.7
1.4
--
--
--
--
--
--
pF
pF
pF
nC
nC
nC
Switching Characteristics
t
d(on)
Turn on Delay Time
V
DD
=-10V,
Turn on Rise Time
Turn Off Delay Time
Turn Off Fall Time
I
D
=-2A,
R
G
=3.3Ω,
V
GS
=-4.5V
--
--
-
--
11
32
25
38
--
--
--
--
ns
ns
ns
ns
t
r
t
d(off)
t
f
Source Drain Diode Characteristics
I
SD
V
SD
Notes:
Source drain current(Body Diode)
Forward on voltage
②
T
A
=25℃
T
j
=25℃, I
SD
=-1A,
V
GS
=0V
--
--
--
-0.83
-1.2
-1.2
A
V
①
Pulse width limited by maximum allowable junction temperature
②Pulse
test ; Pulse width300s, duty cycle2%.
Rev 8: Nov 2018
www.born-tw.com
Page 2 of 4
SI2301S
MOSFET
Typical Characteristics
-VGS(TH), Gate -Source Voltage (V)
P-Channel Enhancement-Mode MOSFET
ROHS
-I
D
, Drain-Source Current (A)
-V
DS
, Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
Tj - Junction Temperature (°
C)
Fig2.
Normalized Threshold Voltage Vs. Temperature
Tc, Case Temperature (°
C)
-V
GS
, Gate -Source Voltage (V)
Fig3.
Typical Transfer Characteristics
-V
DS
, Drain -Source Voltage (mV)
-ID, Drain-Source Current (A)
-V
GS
, Gate -Source Voltage (V)
Fig4.
Drain -Source Voltage vs Gate -Source Voltage
-ISD, Reverse Drain Current (A)
-V
SD
, Source-Drain Voltage (V)
Fig5.
Typical Source-Drain Diode Forward Voltage
-ID - Drain Current (A)
-V
DS
, Drain -Source Voltage (V)
Fig6.
Maximum Safe Operating Area
Rev 8: Nov 2018
www.born-tw.com
Page 3 of 4
SI2301S
MOSFET
Typical Characteristics
-VGS, Gate-Source Voltage (V)
P-Channel Enhancement-Mode MOSFET
ROHS
-V
DS
, Drain-Source Voltage (V)
Fig7.
Typical Capacitance Vs. Drain-Source Voltage
C, Capacitance (pF)
Qg, Total Gate Charge (nC)
Fig8.
Typical Gate Charge Vs. Gate-Source Voltage
ZqJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Fig9.
Normalized Maximum Transient Thermal Impedance
SOT -23 PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
(UNIT)：mm
Rev 8: Nov 2018
www.born-tw.com
Page 4 of 4
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