MMBT5401
Transistors
SOT-23
SOT-23 Plastic-Encapsulate Transistors(PNP)
RHOS
Features
Complementary to MMBT5551
Epitaxial planar die construction
Power Dissipation of 300mW
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: 2L
Maximum Ratings
(
Ratings at 25℃ ambient temperature unless otherwise specified.)
Parameters
Collector-Base Voltage
Collector-Emitter Voltage
Emitter -Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Thermal resistance From junction to ambient
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
Tstg
R
θJA
Value
-160
-150
-5
-600
300
150
-55-+150
416
Unit
V
V
V
mA
mW
℃
℃
℃/W
Electrical Characteristics
(
Ratings at 25℃
ambient temperature unless otherwise specified).
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
Symbols
V
(BR)CBO
V
(BR)CEO *
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
h
FE(2)
*
h
FE(3)
*
V
CE(sat)1 *
V
CE(sat)2 *
V
BE(sat)1 *
V
BE(sat)2 *
f
T
Test Condition
I
C
=-100uA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10uA, I
C
=0
V
CB
=-120V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-5V, I
C
=-1mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-50mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-5V, I
C
=10mA,f=30MHz
Limits
Min
-160
-150
-5
80
100
30
Max
Unit
V
V
V
nA
nA
-100
-100
300
-0.2
-0.5
-1.00
-1.00
100
V
V
V
V
MHz
*Pulse test: pulse width≤300us, duty cycle≤2.0%
CLASSIFICATION OF h
FE(2)
HFE
RANK
RANGE
L
100-200
100-300
H
200-300
Rev 8: Nov 2014
www.born-tw.com
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