M8550
Transistors
SOT-23 Plastic-Encapsulate Transistors(PNP)
RHOS
SOT-23
Features
Complimentary to M8050
Collector Current: I =0.8A
Maximum Ratings
(
Ratings at 25℃ ambient temperature unless otherwise specified.)
Symbol
1. BASE
2. EMITTER
3. COLLECTOR
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-25
-6
-0.
8
0.2
150
-55-150
Units
V
V
V
A
W
℃
℃
V
CBO
V
CEO
V
EBO
MARKING :
2TY
I
C
P
C
T
j
T
stg
Electrical Characteristics
(
Ratings at 25℃
ambient temperature unless otherwise specified).
Parameter
Symbols
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
f
T
Test Condition
I
C
=-100uA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100uA, I
C
=0
V
CB
=-35V, I
E
=0
V
CE
=-20V, I
B
=0
V
CE
=-1V, I
C
=-5mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-800mA
I
C
=-800mA, I
B
=-80mA
I
C
=-800mA, I
B
=-80mA
V
CE
=-6V, I
C
=-20mA,f=30MHz
Limits
Min
-40
-25
-6
Max
Unit
V
V
V
nA
nA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
CLASSIFICATION OF h
FE(2)
RANK
RANGE
-100
-100
45
85
40
400
-0.50
-1.20
150
V
V
MHz
L
85-300
H
300-400
Rev 8: Nov 2014
www.born-tw.com
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