AOZ8671BDT-03N
ESD Protection Diode
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Features
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24Watts peak pulse power (tp = 8/20μs)
Bidirectional configurations
Solid-state silicon-avalanche technology
Low clamping voltage
Low leakage current
IEC 61000-4-2 ±8kV contact ±15kV air
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 4A (8/20μs)
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Applications
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Mechanical Data
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Cell Phone Handsets and Accessories
Microprocessor based equipment
Personal Digital Assistants (PDA’s)
Notebooks, Desktops, and Servers
Portable Instrumentation
DFN1006 package
Molding compound flammability rating: UL 94V-0
Packaging: Tape and Reel
RoHS/WEEE Compliant
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Schematic & PIN Configuration
DFN1006
Revision 2018
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AOZ8671BDT-03N
»
Absolute Maximum Rating
Rating
Peak Pulse Power ( t
p
=8/20μs )
Peak Pulse Current ( t
p
=8/20μs ) (note1)
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
Lead Soldering Temperature
Junction Temperature
Storage Temperature
Symbol
P
PP
I
pp
V
ESD
T
L
T
J
T
stg
Value
32
4
15
8
260(10seconds)
-55 to + 125
-55 to + 125
Units
Watts
A
kV
℃
℃
℃
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Electrical Characteristics
Parameter
Reverse Stand-Off Voltage
Holding
Voltage
Holding Current
Reverse Leakage Current
Clamping Voltage
Trigger
Voltage
Junction Capacitance
Symbol
V
RWM
V
H
I
H
I
R
V
C
V
T
Conditions
Min
Typical
Max
3.3
Units
V
V
mA
I
T
=I
H
2.0
15
5.0
V
RWM
=5V,T=25℃
I
PP
=4A,t
p
=8/20μs
14
V
R
= 0V, f = 1MHz
0.65
500
8
16
nA
V
V
pF
C
j
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Electrical Parameters (TA = 25°C unless otherwise noted)
Symbol
I
PP
V
C
V
RWM
I
R
V
T
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @
I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @
V
RWM
Trigger voltage
Test Current
Holding voltage
Holding Current
VT
V
RWM
V
H
I
PP
I
R
V
H
V
C
V
RWM
V
T
I
T
V
H
I
H
I
PP
Note:.
8/20μs
pulsewaveform
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AOZ8671BDT-03N
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Typical Characteristics
Figure 1: Peak Pulse Power vs. Pulse Time
P
pp
–
Peak Pulse Power - Ppp(KW)
10
Figure 2: Power Derating Curve
110
Percent of Rated Power for I
pp
1,000
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
1
s
32w
8/20µ
waveform
0.1
0.01
0.1
1
10
100
t
d
–
Pulse Duration - µs
Ambient Temperature - T
A
(℃)
Figure3:
Pulse Waveform
110
100
90
80
Figure 4: Clamping Voltage vs.Ipp
9
8
Clamping Voltage–V
C
(V)
Waveform
Paramters
tr=8µs
td=20µs
7
6
5
4
3
2
1
0
0
1
2
3
4
I
pp
70
60
50
40
30
td=Ipp/2
e
-1
Percent
20
10
0
0
5
10
15
20
25
30
Test
Waveform
Paramters
tr=8µs
td=20µs
5
6
Time (µs)
Peak Pulse Current–I
PP
(A)
Revision 2018
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AOZ8671BDT-03N
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Outline Drawing – DFN1006
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Marking
R1
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Ordering information
Order code
AOZ8671BDT-03N
Package
DFN1006
Base qty
10k
Delivery mode
Tape and reel
Revision 2018
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4/4
FPGA/CPLD
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