AR0521P0
1-Line Ultra Low Capacitance Bi-directional TVS Diode
Description
The AR0521P0 is a bi-directional TVS diode, utilizing
leading monolithic silicon technology to provide fast re-
sponse time and low ESD clamping voltage, making this
device an ideal solution for protecting voltage sensitive
high-speed data lines. The AR0521P0 has an ultra-low
capacitance with a typical value at 0.3pF, and complies
with the IEC 61000-4-2 (ESD) standard with ±25kV air
and ±22kV contact discharge. It is assembled into an ul-
tra-small 0.6x0.3x0.3mm lead-free DFN package. The
small size, ultra-low capacitance and high ESD surge
protection make AR0521P0 an ideal choice to protect cell
phone, digital video interfaces, HDMI, DVI, USB2.0,
USB3.0, and other high speed ports.
Mechanical Characteristics
Package: DFN0603-2 (0.6×0.3×0.3mm)
Case Material: “Green” Molding Compound.
Moisture Sensitivity: Level 3 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Below
Applications
Cellular Handsets and Accessories
Display Ports
MDDI Ports
USB Ports
Digital Visual Interface (DVI)
PCI Express and Serial SATA Ports
Features
Ultra small package: 0.6x0.3x0.3mm
Ultra low capacitance: 0.3pF typical
Ultra low leakage: nA level
Operating voltage: 5V
Low clamping voltage
2-pin leadless package
Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test
Air discharge: ±25kV
Contact discharge: ±22kV
– IEC61000-4-5 (Lightning) 4A (8/20μs)
Marking Information
ZZ
Dimensions and Pin Configuration
RoHS Compliant
0.6
Ordering Information
Part Number
AR0521P0
Packaging
10000/Tape & Reel
Reel Size
7 inch
0.3
-
0.3
Package Dimensions
Circuit and Pin Schematic
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AR0521P0
Absolute Maximum Ratings (T
A
=25°C unless otherwise specified)
Parameter
Peak Pulse Power (8/20µs)
Peak Pulse Current (8/20µs)
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
Operating Temperature Range
Storage Temperature Range
Symbol
Ppk
I
PP
V
ESD
T
J
Tstg
Value
100
4
±25
±22
−55 to +125
−55 to +150
Unit
W
A
kV
°C
°C
Electrical Characteristics (T
A
=25°C unless otherwise specified)
Parameter
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
C
J
Min
Typ
Max
5
Unit
V
V
μA
V
V
pF
Test Condition
6.5
0.02
9.5
0.2
12
25
0.3
0.5
I
T
= 1mA
V
RWM
= 5V
I
PP
= 1A (8 x 20µs pulse)
I
PP
= 4A (8 x 20µs pulse)
VR = 0V, f = 1MHz
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AR0521P0
Typical Performance Characteristics (T
A
=25°C unless otherwise Specified)
Junction Capacitance vs. Reverse Voltage
Peak Pulse Power vs. Pulse Time
Clamping Voltage vs. Peak Pulse Current
Power Derating Curve
8 X 20μs Pulse Waveform
ESD Clamping Voltage
8 kV Contact per IEC61000−4−2
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AR0521P0
DFN0603-2 Package Outline Drawing
D
e
h
h
E
b
-
-
SYM
A
A1
b
DIMENSIONS
MILLIMETERS
MIN
0.230
0.000
0.215
0.120
0.550
0.020
0.245
0.150
0.600
0.355 BSC
0.250
0.160
0.300
0.190
0.079 BSC
0.350
0.220
NOM
MAX
0.330
0.050
0.275
0.180
0.650
L
Bottom View
A
c
D
e
c
A1
E
L
h
Suggested Land Pattern
SYM
╋
Y1
DIMENSIONS
MILLIMETERS
0.30
0.25
0.15
0.40
0.65
INCHES
0.012
0.010
0.006
0.016
0.026
X
Y3
Y2
Z
Y1
Y2
╋
Y3
Z
X
Contact Information
Applied Power Microelectronics Co., Ltd.
Website: http://www.appliedpowermicro.com
Email: sales@appliedpowermicro.com
Phone: +86 (0519) 8399 3606
Applied Power Microelectronics Co., Ltd. (APM) reserves the right to make changes to the product specification and data in this document without notice. APM makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does APM assume any liability arising from the application or use of any products or circuits, and specifically dis-
claims any and all liability, including without limitation special, consequential or incidental damages.
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