AP83T03K
N-Channel Power MOSFET
AIIP
DATA SHEET
。iW
30V
6m0
75A
ER
T l."W On-resistance
『½ Jimple Drive Requirement
T Fast Switching Characteristic
T R HS
D
BVoss
Ros(ON)
lo
。
c
。
mpliant & Halogen-Free
G
AP83T03K series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance卸叫
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The T0-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP83T03GJ) are available for low-profile
applications.
Descripti n
。
T0-252(四
-
v
-
G
。
V
D
。
Symbol
Rating
30
+20
75
53
240
、:
Units
C
J
-
U
v
v
A
A
A
n\l!,a·I Power Dissipation
60
-55 to 175
-55 to 175
w
Storage Temperature Range
Operating Junction Temperature Range
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Maximum Thermal Resistance, Junction-ambient
Value
2.5
62.5
110
Units
℃/W
℃/W
℃/W
1
Data
&
specificatiom subject to change without notice
All Power Semiconduct。「co.,Ltd
v1.0
AP83T03K
AIIP
°
DATA SHEET
N-Channel Power MOSFET
。iW
.
6
11
3
.
10
+100
34
ER
Electrical Characteristics
@'平
25 C(unless
Symbol
BVoss
RoscoNJ
VGS(th)
9ts
l oss
IGss
Q
口
O
g
s
Q
口d
与(on)
liirom
Ciss
Coss
Crs
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source O
『
1-Resistance
Gate Threshold Voltage
F。「ward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain (
”
Miller'
’
) Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transf1
Gate Resistance
-Drain D,,.½。d
Symbol
Vso
Orr
!½
2
Test Conditions
V
G
s
=
OV, 1
0=
250uA
V
G
s 10V, 1
0
40A
=
=
。
therwise specified)
Min.
30
.
.
.
.
.
.
.
Typ.
.
.
.
.
55
.
.
21
Max. Units
v
mo
mo
v
s
uA
nA
nC
nC
V
G
s
=
4.5V, 1
0 =
30A
Vos
=
V
G
s, 10
=
250uA
Vos
=
10V, 1
0=
30A
V
0
s
=
24V, VGs
=
OV
V
G
s
=
±.20V, Vos
=
OV
1
0=
30A
V
G
s
=
4.5V
Vos
=
15V
1
0=
30A
R
G=
3.30
VGs
=
10V
V
0
s
=
24V
,,_..
IRg
1
'\"
,、,
,½飞....
吠\
龄在e
南
f\ec6
品
ry已harge
《 \\ 飞可基r:_a
币
e(
F½问川Q扣\vort寻岳
2
fir
Rev½
点
Ri½毛½付
,
e
俨丁、J
、--
.-,-
=
忠队、
、½
f
=
1½Q½Hz
Test Conditions
=
r飞
而
,,气
,
-吃
’节俨
)
nC
\户与/
J’雪£_
-.......ns
24\
\-
、,,
1840
.
.
.
3坠
4
主?、
/!乡F
,,
a·ey
t
,.,
飞飞
气口号
ns
ns
pF
pF
pF
\
I
\...
-
号
H叮50
½
340
250
.
0.9
,J-4.,
。
1
5=
30A, V
G
s
=
OV
ls 10A, V
G
s OV,
dl/dt
=
1OONµs
Min.
.
.
.
Typ.
.
29
22
Max. Units
1.2
.
.
v
ns
nC
1.Pulse w'Ld h limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTI N.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
。
All Power Semiconduct。「co.,Ltd
2
v1.0
AP83T03K
AIIP
DATA SHEET
N-Channel Power MOSFET
。iW
ER
2”
’“
-
-
v
ι
v
av”w-
h
a
q
E
S
MWK
且
G
E
莲
3
-
1
110
「
哺Z
c 一-
-
2a
- 句,,
b吨耳lll
e
-
CJ
"'
'7o=.t.
曹V
H
RM
A
-
vv
--
-r.w
,JOV
气甲马
J.tw
E
S
K
且
Q
S
H
“
,,
「
←
L
..
↓
4
I
↓
11
!
V ns, Drain-to-Source Voltage (J/)
"
Fig 1. Typical Output Characteristics
I»
=
½OA
气
ε
。
0
Tc斗2s c
EEEM『
二十
.,
气"
+-
一一一
-1- - ½ -
O
SI
」」
IN
+-
l
「
-1- -
½-
JSI
鸟,
Junction Temperature (
0
C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
←
"
a飞
-
←
-
-
←
-
-
←
-
-
←
-
一 一 一 一
-
一
一一一 一
- - - -
-
-
--- -
U
E
主
→
上
--
+
--
一 -一 一
-
一
一 一一 一
l
l
甲
、
同
同
"
厂
「
」- L - L -
°
I
TJ=25
了
一
-----
--- -
『吨J
一
「
一一
下
一
下
了
.
L
L
L
L
L
1.2
IA
l.f
I.I
1
1,2
V
血
,
Source』to-Drain Voltage (J/)
,,
迦
S
K
E
宫
晶
h,
A
-------
→
--
-------
」
--
一一一一一一一
寸
一一
- ←- - -
- -- -
- -一 一 -
- 一一 -
一 -- 一
一 -- 一
一一
一一
-
- - ---
- - -
-- -
--
-
l
l
→
lIF
1li
-
-
-
」
」
丁
』
→
l
‘-
- - - -
「
-
--- -
....
- - - -
→
-
--- -
'
.fl
-
__ l __
+
J.
一 一
-
一
一 一
- 「- - -
- -- -
-
←
- -- -
→
-
- -- -
l
l
l
「
寸
l
IA
l
一 一 一 一 一
Temperature (
一 一 -
一 一
巧
一
Junction
一
一
C)
一 一
一 一
,
°
”
”’
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
All Power Semiconduct。「co.,Ltd
3
v1.0
AP83T03K
AIIP
DATA SHEET
N-Channel Power MOSFET
,,
帖’UHS-
G
A
B-h
趣
。
同
S
且
惠
。
s
o
h
1'0I
l
l
l
←
l
l
l
→
l
l
l
ε』
←
l
←
←
i? +
+
+
+
+
→
→ →
l
→
l
v
eRq
hv
τ
…
。iW
ER
10
20
31
"
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
I.Hl
Ul
U
,,
t, Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
Vns
90号也
VG
QG
10号也
V Gs
:μ
:½+→!
td
(,。
m岛
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
All Power Semiconduct。「co.,Ltd
4
v1.0
AP83T03K
N-Channel Power MOSFET
AIIP
DATA SHEET
。iW
ER
T0-251
MARKING INFORMATION
83T03GJ
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y: Last Digit Of The Year
WW: Week
SSS: Sequence
T0-252
Date Code (YWWSSS)
Y: Last Digit Of The Year
WW: Week
SSS: Sequence
All Power Semiconduct。「co.,Ltd
5
v1.0