1N4148W/1N4448W/1N914BW
400mW High Speed SMD Switching Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Surface Mount Device Type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
0.079(2.0)
0.063(1.6)
SOD-123FL
8°(8°)
2°(2°)
0.008(0.2)
0.004(0.1)
0.043(1.1)
0.035(0.9)
0.150(3.8)
0.134(3.4)
0.111(2.8)
0.095(2.4)
MECHANICAL DATA
- Case: Flat lead SOD-123FL small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
0.150(3.8)
0.134(3.4)
0.079(2.0)
0.063(1.6)
0.047(1.2)
0.032(0.8)
0.037(0.95)
0.022(0.55)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current @ t=1.0μs
Forward Current
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
PARAMETER
Reverse Voltage
Forward Voltage
1N4448W, 1N914BW
1N4148W
1N4448W, 1N914BW
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
I
F
=5.0mA
I
F
=10.0mA
I
F
=100.0mA
V
R
=20V
V
R
=75V
V
R
=0, f=1.0MHz
(Note 2)
I
R
C
J
t
rr
V
F
0.62
-
-
-
-
-
-
0.72
1.0
1.0
25
5.0
4.0
4.0
nA
μA
pF
ns
V
I
R
=100μA
I
R
=5μA
SYMBOL
P
D
V
R
V
RRM
I
FRM
I
FSM
I
F
R
θJA
T
J
, T
STG
SYMBOL
V
R
MIN
100
75
VALUE
400
100
75
300
2
150
450
-65 to +150
MAX
-
-
o
Notes 1: Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load
Notes 2: Reverse Recovery Test Conditions : I
F
=10mA, I
R
=60mA, R
L
=100Ω, I
RR
=1mA
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0.047(1.2)
0.032(0.8)
UNIT
mW
V
V
mA
A
mA
C/W
o
C
UNIT
V
1N4148W/1N4448W/1N914BW
400mW High Speed SMD Switching Diode
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
Fig.1 Typical Forward Characteristics
100
100
Fig. 2 Reverse Current vs Reverse Voltage
Instantaneous Forward Current(A)
10
Reverse Current (μA)
10
1
1
0.1
0.01
0.1
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Instantaneous Forward Volatge (V)
0.01
0
20
40
60
80
100
120
Reverse Volatge (V)
Fig. 3 Admissible Power Dissipation
500
6
5
Junction Capacitance (pF)
4
3
2
1
0
0
20
40
60
80
100
120
140
160
0
Fig. 4 Typical Junction Capacitance
400
Power Dissipation (mW)
300
200
100
0
Ambient Temperature (°C)
2
4
6
8
10
Reverse Voltage (V)
Fig. 5 Forward Resistance vs. Forward Current
10000
Dynamic Forward Resistance (Ώ)
1000
100
10
1
0.01
0.1
1
Forward Current (mA)
10
100
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1N4148W/1N4448W/1N914BW
400mW High Speed SMD Switching Diode
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DIYI disclaims any and all liability arising out of the application or use of
•
any product including damages incidentally and consequentially occurred.
from DIYI.
specifications at any time without notice. Customers should obtain and confirm the
latest product information and specifications before final design, purchase or use.
•
DIYI does not assume any and all implied warranties, including warranties of fitness for
particular purpose, non-infringement and merchantability.
Applications shown on the herein document are examples of standard use and
operation. Customers are responsible in comprehending the suitable use in particular
applications.
•
The products shown herein are not designed and authorized for equipments requiring high
level of reliability or relating to human life and for any applications concerning life-saving
or life-sustaining, such as medical instruments, transportation equipment, aerospace
machinery et cetera. Customers using or selling the products for use in such applications
se
do so at their own risk and agree to fully indemnify DIYI for any damages resulting from such
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DIYI makes no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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