山东晶导微电子有限公司
Jingdao Microelectronics
Surface Mount General Purpose Silicon Rectifiers
Reverse Voltage - 50 to 1000 V
Forward Current - 1 A
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Easy to pick and place
• Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
• Case: SMBF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 57mg / 0.002oz
S1ABF THRU S1MBF
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
Top View
Marking Code： S1AB-S1MB
Simplified outline SMBF and symbol
Maximum Ratings and Electrical characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Parameter
Maximum Repetitive Peak Reverse Voltage
Symbols
V
RRM
V
RMS
V
DC
S1ABF
S1BBF
S1DBF
S1GBF
S1JBF
S1KBF
S1MBF
Units
V
V
V
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
c
= 125
°C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
Maximum Instantaneous Forward Voltage at 1 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
（1）
I
F(AV)
1
A
I
FSM
30
A
V
V
F
1.1
5
50
15
75
-55 ~ +150
T
a
= 25
°C
T
a
=125
°C
I
R
μA
C
j
R
θJA
T
j
, T
stg
pF
°C/W
°C
Typical Thermal Resistance
（2）
Operating and Storage Temperature Range
（1）
Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2016.12
SMBF-A-S1ABF~S1MBF-1A1KV
Page 1 of 3
山东晶导微电子有限公司
Jingdao Microelectronics
S1ABF THRU S1MBF
Fig.1 Forward Current Derating Curve
1.2
Fig.2 Typical Reverse Characteristics
Instaneous Reverse Current（
μ
A）
100
Average Forward Current (A)
1.0
0.8
0.6
0.4
0.2
Single phase half-wave 60 Hz
resistive or inductive load
T
J
=125
°C
10
1.0
T
J
=25
°C
0.1
00
20
40
60
80
100
120
140
0.0
25
50
75
100
125
150
175
Case Temperature (°C)
percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Instaneous Forward
Characteristics
Instaneous Forward Current (A)
Junction Capacitance ( pF)
10
T
J
=25
°C
100
Fig.4 Typical Junction Capacitance
T
J
=25
°C
1.0
10
0.1
pulse with 300μs
1% duty cycle
0.01
0.0
1
0.5
1.0
1.5
2.0
2.5
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
40
35
30
25
20
15
10
05
00
1
10
100
8.3 ms Single Half Sine Wave
(JEDEC Method)
Number of Cycles
2016.12
www.sdjingdao.com
Page 2 of 3
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