山东晶导微电子有限公司
Jingdao Microelectronics
Surface Mount Superfast Recovery Rectifier
Reverse Voltage – 50 to 600 V
Forward Current –2 A
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Superfast reverse recovery time
• Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 27mg / 0.00095oz
ES2AF THRU ES2JF
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
Top View
Marking Code:
ES2AF~ES2JF: ES2A~ES2J
Simplified outline SMAF and symbol
Absolute Maximum Ratings and Characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Maximum Repetitive Peak Reverse Voltage
Symbols
V
RRM
V
RMS
V
DC
I
F(AV)
ES2AF
ES2BF
ES2CF
ES2DF
ES2EF
ES2GF
ES2JF
Units
V
V
V
50
35
50
100
70
100
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
c
= 125
°C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
Maximum Forward Voltage at 2 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
at V
R
=4V, f=1MHz
（1）
2
A
A
1.25
1.68
V
I
FSM
50
V
F
T
a
= 25
°C
T
a
=125
°C
1
5
100
I
R
μA
C
j
30
pF
Maximum Reverse Recovery Time
t
rr
R
θJA
R
θJC
T
j
, T
stg
35
65
20
-55 ~ +150
ns
Typical Thermal Resistance
（2）
°C/W
°C
Operating and Storage Temperature Range
（1）Measured
with I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A .
（2）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2016.07
SMAF-E-ES2AF~ES2JF-2A600V
Page 1 of 3
山东晶导微电子有限公司
Jingdao Microelectronics
ES2AF THRU ES2JF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
t
rr
+0.5
+
25Vdc
approx
D.U.T
PULSE
GENERATOR
Note 2
0
-0.25
-
1 ohm
NonInductive
OSCILLOSCOPE
Note 1
-1.0
Note：1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
10ns/div
Set time Base for 10ns/div
Fig.2 Maximum Average Forward Current Rating
Average Forward Current (A)
3.0
300
Fig.3 Typical Reverse Characteristics
I
R
- Reverse Current (
μ
A)
2.5
2.0
1.5
1.0
0.5
Single phase half-wave 60 Hz
resistive or inductive load
100
T
J
=125
°C
10
T
J
=75
°C
1.0
T
J
=25
°C
0.0
25
50
75
100
125
150
175
0.1
0
20
40
60
80
100
Case Temperature (°C)
Fig.4 Typical Forward Characteristics
Instaneous Forward Current (A)
Junction Capacitance ( pF)
10
T
J
=25
°C
% of PIV.VOLTS
Fig.5 Typical Junction Capacitance
T
J
=25
°C
100
1.0
ES2AF~ES2DF
0.1
ES2EF/WS2GF
ES2JF
10
0.01
T
J
=25
°C
f = 1.0MHz
V
sig
= 50mV
p-p
0.001
0
0.5
1.0
1.5
2.0
2.5
1
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
60
50
40
30
20
10
00
1
8.3 ms Single Half Sine Wave
(JEDEC Method)
10
100
Number of Cycles
2016.07
www.sdjingdao.com
Page 2 of 3
NXP MCU
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