山东晶导微电子有限公司
Jingdao Microelectronics
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200V
Forward Current - 5.0A
FEATURES
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 27mg / 0.00095oz
SS52F THRU SS520F
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
Top View
Marking Code: SS52 — SS520
Simplified outline SMAF and symbol
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols
SS52F
SS54F
SS56F
SS58F
SS510F
SS512F
SS515F
SS520F
Units
Maximum Repetitive Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
40
28
40
60
42
60
80
56
80
5.0
100
70
100
120
84
120
150
105
150
200
140
200
V
V
V
A
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
I
FSM
150
A
Max Instantaneous Forward Voltage at 5 A
V
F
0.55
0.70
1.0
50
0.85
V
Maximum DC Reverse Current
at Rated DC Reverse Voltage
T
a
= 25°C
T
a
=100°C
I
R
mA
Typical Junction Capacitance
（1）
C
j
R
θJA
T
j
T
stg
500
60
-55 ~ +125
-55 ~ +150
300
pF
°C/W
°C
°C
Typical Thermal Resistance
（2）
Operating Junction Temperature Range
Storage Temperature Range
（1）
Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2016.12
SMAF-S-SS52F~SS520F-5A200V
Page 1 of 3
山东晶导微电子有限公司
Jingdao Microelectronics
SS52F THRU SS520F
Fig.1 Forward Current Derating Curve
Instaneous Reverse Current (
μA)
6.0
10
4
Fig.2 Typical Reverse Characteristics
Average Forward Current (A)
5.0
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
T
J
=100
°C
10
3
10
2
T
J
=75
°C
10
1
T
J
=25
°C
10
0
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage（%）
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Fig.4 Typical Junction Capacitance
20
10
T
J
=25
°C
Junction Capacitance ( pF)
1000
500
1
SS52F/SS54F
SS56F/SS58F
SS510F/SS520F
100
20
10
0.1
SS52F/SS54F
SS56F-SS520F
0.1
0
0.5
1.0
1.5
2.0
1
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
160
140
120
100
80
60
40
20
00
1
10
100
8.3 ms Single Half Sine Wave
(JEDEC Method)
Transient Thermal Impedance（
°C
/W）
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
Fig.6- Typical Transient Thermal Impedance
100
10
1
0.01
0.1
1
10
100
Number of Cycles at 60Hz
t, Pulse Duration（sec）
2016.12
www.sdjingdao.com
Page 2 of 3
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