山东晶导微电子股½有限公司
Jingdao Microelectronics co.LTD
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 45 V
Forward Current - 5.0A
Features
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case: SMB
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 0.1g / 0.0034oz
SSL545B
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
2
1
Top View
Marking Code: SL545B
Simplified outline SMB and symbol
Maximum Ratings and Electrical characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Parameter
Maximum Repetitive Peak Reverse Voltage
Symbols
SSL545B
45
32
45
Units
V
V
V
V
RRM
V
RMS
V
DC
I
F(AV)
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
c
= 100
°C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
Maximum Instantaneous Forward Voltage at 5 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
（1）
5
A
A
V
I
FSM
150
V
F
0.45
1
50
800
37
-55 ~ +150
-55 ~ +150
T
a
= 25
°C
T
a
=100
°C
I
R
mA
C
j
R
θJA
T
j
T
stg
pF
°C/W
°C
°C
Typical Thermal Resistance
（2）
Operating Junction Temperature Range
Storage Temperature Range
（1）
Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2017.01
SMB-S-SSL545B-5A45V
Page 1 of 3
山东晶导微电子股½有限公司
Jingdao Microelectronics co.LTD
SSL545B
Fig.1 Forward Current Derating Curve
Instaneous Reverse Current (
μA)
6.0
10
5
Fig.2 Typical Reverse Characteristics
Average Forward Current (A)
5.0
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
10
4
T
J
=100
°C
10
3
10
2
T
J
=25
°C
10
1
0
20
40
60
80
100
Case Temperature (
°C)
Percent of Rated Peak Reverse Voltage（%）
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Fig.4 Typical Junction Capacitance
20
10
T
J
=25
°C
Junction Capacitance ( pF)
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.0
1000
500
1
100
20
10
0.1
1
10
100
0.1
Instaneous Forward Voltage (V)
Reverse Voltage (V)
175
150
125
100
75
50
25
00
1
10
100
8.3 ms Single Half Sine Wave
(JEDEC Method)
Transient Thermal Impedance（
°C
/W）
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
Fig.6- Typical Transient Thermal Impedance
100
10
1
0.01
0.1
1
10
100
Number of Cycles at 60Hz
t, Pulse Duration（sec）
2017.01
www.sdjingdao.com
Page 2 of 3
Microchip MCU
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