山东晶导微电子有限公司
Jingdao Microelectronics
Silicon Planar Zener Diodes
BZT52C2V4S~BZT52C43S
PINNING
FEATURES
•
Total power dissipation: Max. 200mW.
• Wide zener reverse voltage range 2.4V to 43V.
• Ideally suited for automated assembly processes
MECHANICAL DATA
▪Case:
SOD-323
▪Terminals:
Solderable per MIL-STD-750, Method 2026
▪
A pprox. Weight: 5.48mg / 0.00019oz
PIN
1
2
DESCRIPTION
Cathode
Anode
2
1
Top View
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings And Characteristics
（
Ta = 25
°C）
Parameter
Power Dissipation (NOTE 1)
Forward Voltage at I
F
= 10 mA(NOTE 2)
Typical thermal resistance juncting to ambient
Operating and Storage Temperature Range
Symbol
P
D
V
F
R
θJA
T
j
, T
stg
Value
200
0.9
625
-55 ~ +150
Unit
mW
V
°C/W
°C
Transient Thermal Impedance（
°C
/W）
Fig.1 Power Derating Curve
250
Fig.2 Typical Transient Thermal Impedance
2000
1000
Power Dissipation P
D
(
W
)
200
150
100
100
50
0
25
50
75
100
125
150
175
10
0.01
0.1
1
10
100
T
a
,Case Temperature (
°C)
t, Pulse Duration（sec）
2017.04
SOD323-W-BZT52C2V4S~BAT52C43S-200mW
Page 1 of 3
山东晶导微电子有限公司
Jingdao Microelectronics
Characteristics at Ta = 25°C
Zener Voltage Range
(NOTE 2)
BZT52C2V4S~BZT52C43S
Maximum Zener
Impedance
(NOTE 3)
Maximum
Reverse
Current
(NOTE 2)
Typical
Temperature
Coefficient
@I
ZTC
mV/℃
Test
Current
I
ZTC
Type
Marking
Min（V）
V
ZT
（@
I
ZT
）
Nom（V）
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
Max（V）
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
Z
ZT
（@
I
ZT
）
Z
ZK
（@
I
ZK
）
I
ZK
I
R
μA
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
V
R
V
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
MIN
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6
7
9.2
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
10
MAX
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7
8
9
10
11
13
14
16
18
20
22
25.3
29.4
33.4
37.4
41.2
12
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
5
(Ω)
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
100
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
700
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
1
BZT52C2V4S
BZT52C2V7S
BZT52C3V0S
BZT52C3V3S
BZT52C3V6S
BZT52C3V9S
BZT52C4V3S
BZT52C4V7S
BZT52C5V1S
BZT52C5V6S
BZT52C6V2S
BZT52C6V8S
BZT52C7V5S
BZT52C8V2S
BZT52C9V1S
BZT52C10S
BZT52C11S
BZT52C12S
BZT52C13S
BZT52C15S
BZT52C16S
BZT52C18S
BZT52C20S
BZT52C22S
BZT52C24S
BZT52C27S
BZT52C30S
BZT52C33S
BZT52C36S
BZT52C39S
BZT52C43S
WX
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WJ
WK
WL
WM
WN
WO
WP
WQ
WR
WS
WT
WU
2.2
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
0.1 10.5
0.1
11.2
0.1 12.6
0.1
14
0.1 15.4
0.1 16.8
0.1 18.9
0.1
21
0.1 23.1
0.1 25.2
0.1 27.3
0.1
32
NOTE:
1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 .
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
2017.04
www.sdjingdao.com
Page 2 of 3
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