山东晶导微电子股½有限公司
Jingdao Microelectronics co.LTD
Surface Mount Superfast Recovery Rectifier
Reverse Voltage – 50 to 600 V
Forward Current – 1 A
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Superfast reverse recovery time
• Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 27mg / 0.00095oz
ES1AF THRU ES1JF
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
Top View
Marking Code:
ES1AF~ES1JF: ES1A~ES1J
Simplified outline SMAF and symbol
Absolute Maximum Ratings and Characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Maximum Repetitive Peak Reverse Voltage
Symbols
V
RRM
V
RMS
V
DC
I
F(AV)
ES1AF
ES1BF
ES1CF
ES1DF
ES1EF
ES1GF
ES1JF
Units
V
V
V
50
35
50
100
70
100
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
c
= 125
°C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
Maximum Forward Voltage at 1 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
at V
R
=4V, f=1MHz
（1）
1
A
A
1.25
1.68
V
I
FSM
30
V
F
T
a
= 25
°C
T
a
=125
°C
1
5
100
I
R
μA
C
j
15
pF
Maximum Reverse Recovery Time
Typical Thermal Resistance
（2）
t
rr
R
θJA
T
j
, T
stg
35
80
-55 ~ +150
ns
°C/W
°C
Operating and Storage Temperature Range
（1）Measured
with I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A .
（2）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2016.01
SMAF-E-ES1AF~ES1JF-1A600V
Page 1 of 3
山东晶导微电子股½有限公司
Jingdao Microelectronics co.LTD
ES1AF THRU ES1JF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
t
rr
+0.5
+
25Vdc
approx
D.U.T
PULSE
GENERATOR
Note 2
0
-0.25
-
1 ohm
NonInductive
OSCILLOSCOPE
Note 1
-1.0
Note：1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
10ns/div
Set time Base for 10ns/div
Fig.2 Maximum Average Forward Current Rating
Average Forward Current (A)
1.2
300
Fig.3 Typical Reverse Characteristics
I
R
- Reverse Current (
μ
A)
1.0
0.8
0.6
0.4
0.2
Single phase half-wave 60 Hz
resistive or inductive load
100
T
J
=125
°C
10
T
J
=75
°C
1.0
T
J
=25
°C
0.0
25
50
75
100
125
150
175
0.1
0
20
40
60
80
100
Case Temperature (°C)
Fig.4 Typical Forward Characteristics
Instaneous Forward Current (A)
Junction Capacitance ( pF)
10
100
% of PIV.VOLTS
Fig.5 Typical Junction Capacitance
T
J
=25
°C
1.0
ES1AF~ES1DF
0.1
ES1EF/ES1GF
ES1JF
10
0.01
T
J
=25
°C
f = 1.0MHz
V
sig
= 50mV
p-p
0.001
0
0.5
1.0
1.5
2.0
2.5
1
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
35
30
25
20
15
10
05
00
1
8.3 ms Single Half Sine Wave
(JEDEC Method)
Reverse Voltage (V)
10
100
Number of Cycles
2016.01
www.sdjingdao.com
Page 2 of 3
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