山东晶导微电子有限公司
Jingdao Microelectronics
Surface Mount Fast Recovery Rectifiers
Reverse Voltage - 50 to 1000 V
Forward Current - 1 A
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Easy to pick and place
• Fast reverse recovery time
• Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
• Case: SOD-123FL
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 15mg 0.00053oz
FR101W THRU FR107W
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
Simplified outline SOD-123FL and symbol
Absolute Maximum Ratings and Characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Maximum Repetitive Peak Reverse Voltage
Symbols
FR101W FR102W FR103W FR104W FR105W FR106W FR107W
Units
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
c
= 125
°C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
Maximum Forward Voltage at 1 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
at V
R
=4V, f=1MHz
（1）
1
A
A
V
I
FSM
30
V
F
T
a
= 25
°C
T
a
=125
°C
1.3
5
100
I
R
μA
C
j
15
150
85
-55 ~ +150
250
500
pF
Maximum Reverse Recovery Time
Typical Thermal Resistance
（2）
t
rr
R
θJA
T
j
, T
stg
ns
°C/W
°C
Operating and Storage Temperature Range
（1）Measured
with I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A .
（2）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2016.01
SOD123FL-F- FR101W~ FR107W-1A1KV
Page 1 of 3
山东晶导微电子有限公司
Jingdao Microelectronics
FR101W THRU FR107W
Fig.1 Forward Current Derating Curve
1.2
1.0
0.8
0.6
0.4
0.2
Single phase half-wave 60 Hz
resistive or inductive load
Fig.2 Typical Reverse Characteristics
Instaneous Reverse Current（
μ
A）
100
Average Forward Current (A)
T
J
=125
°C
10
1.0
T
J
=25
°C
0.1
00
20
40
60
80
100
120
140
0.0
25
50
75
100
125
150
175
Case Temperature (°C)
percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Instaneous Forward
Characteristics
Instaneous Forward Current (A)
Junction Capacitance ( pF)
10
T
J
=25
°C
100
Fig.4 Typical Junction Capacitance
T
J
=25
°C
1.0
10
0.1
pulse with 300μs
1% duty cycle
0.01
0.0
1
0.5
1.0
1.5
2.0
2.5
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
35
30
25
20
15
10
05
00
1
8.3 ms Single Half Sine Wave
(JEDEC Method)
10
100
Number of Cycles
2016.01
www.sdjingdao.com
Page 2 of 3
Microchip MCU
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