山东晶导微电子有限公司
Jingdao Microelectronics
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200V
Forward Current - 2.0A
FEATURES
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case : SMB
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight :
0.055g / 0.002oz
SS22B THRU SS220B
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
2
1
Top View
Simplified outline SMB and symbol
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols
SS22B
SS24B
SS26B
SS28B
SS210B
SS212B
SS215B
SS220B
Units
Maximum Repetitive Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
40
28
40
60
42
60
80
56
80
2.0
100
70
100
120
84
120
150
105
150
200
140
200
V
V
V
A
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
I
FSM
55
45
A
Max Instantaneous Forward Voltage at 2 A
V
F
0.55
0.5
5
220
0.70
0.85
0.3
3
110
60
-55 ~ +125
-55 ~ +150
0.95
V
mA
pF
°C/W
Maximum DC Reverse Current T
a
= 25°C
at Rated DC Reverse Voltage
T
a
=100°C
Typical Junction Capacitance
（1）
I
R
C
j
R
θJA
T
j
T
stg
Typical Thermal Resistance
（2）
Operating Junction Temperature Range
°C
°C
Storage Temperature Range
（1）
Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2017.01
SMB-S-SS22B~SS220B-2A200V
Page 1 of 3
山东晶导微电子有限公司
Jingdao Microelectronics
SS22B THRU SS220B
Fig.1 Forward Current Derating Curve
Instaneous Reverse Current (
μA)
3.0
10
4
Fig.2 Typical Reverse Characteristics
Average Forward Current (A)
2.5
2.0
1.5
1.0
0.5
Single phase half-wave 60 Hz
resistive or inductive load
10
3
T
J
=100
°C
T
J
=75
°C
10
2
SS22B/SS26B
10
1
T
J
=25
°C
SS28B-SS220B
0.0
25
50
75
100
125
150
10
0
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage（%）
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Fig.4 Typical Junction Capacitance
20
10
T
J
=25
°C
T
J
=25
°C
Junction Capacitance ( pF)
1000
500
200
100
1.0
SS22B/SS24B
SS26B/SS28B
SS210B/SS212B
SS215B/SS220B
20
10
0.1
1
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
SS22B~SS26B
SS28B~SS220B
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
60
50
40
30
20
10
00
1
10
Transient Thermal Impedance（
°C
/W）
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
SS22B-SS28B
SS210B-SS220B
Fig.6- Typical Transient Thermal Impedance
100
10
8.3 ms Single Half Sine Wave
(JEDEC Method)
100
1
0.01
0.1
1
10
100
Number of Cycles at 60Hz
t, Pulse Duration（sec）
2017.01
www.sdjingdao.com
Page 2 of 3
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