山东晶导微电子有限公司
Jingdao Microelectronics
Surface Mount Superfast Recovery Rectifier
Reverse Voltage – 50 to 600 V
Forward Current – 1 A
FEATURES
• Easy pick and place
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Superfast recovery times for high efficiency
MECHANICAL DATA
• Case: SOD-123FL
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight:15mg 0.00053oz
Absolute Maximum Ratings and Characteristics
ES1AW THRU ES1JW
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
Simplified outline SOD-123FL and symbol
Ratings at 25
°C
ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Maximum Repetitive Peak Reverse Voltage
Symbols
V
RRM
V
RMS
V
DC
I
F(AV)
ES1AW ES1BW
ES1CW ES1DW
ES1EW ES1GW
ES1JW
Units
V
V
V
50
35
50
100
70
100
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
c
= 125
°C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
Maximum Forward Voltage at 1 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
at V
R
=4V, f=1MHz
Maximum Reverse Recovery Time
Typical Thermal Resistance
（2）
（1）
1
A
A
1.25
1.68
V
I
FSM
30
V
F
T
a
= 25
°C
T
a
=125
°C
1
5
100
I
R
μA
C
j
15
35
85
-55 ~ +150
pF
t
rr
R
θJA
T
j
, T
stg
ns
°C/W
°C
Operating and Storage Temperature Range
（1）Measured
with I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A .
（2）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2016.01
SOD123FL-E-ES1AW~ES1JW-1A600V
Page 1 of 3
山东晶导微电子有限公司
Jingdao Microelectronics
ES1AW THRU ES1JW
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
t
rr
+0.5
+
25Vdc
approx
D.U.T
PULSE
GENERATOR
Note 2
0
-0.25
-
1 ohm
NonInductive
OSCILLOSCOPE
Note 1
-1.0
Note：1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
10ns/div
Set time Base for 10ns/div
Fig.2 Maximum Average Forward Current Rating
Average Forward Current (A)
1.2
300
Fig.3 Typical Reverse Characteristics
I
R
- Reverse Current (
μ
A)
1.0
0.8
0.6
0.4
0.2
Single phase half-wave 60 Hz
resistive or inductive load
100
T
J
=125
°C
10
T
J
=75
°C
1.0
T
J
=25
°C
0.0
25
50
75
100
125
150
175
0.1
0
20
40
60
80
100
Case Temperature (°C)
Fig.4 Typical Forward Characteristics
Instaneous Forward Current (A)
Junction Capacitance ( pF)
10
100
% of PIV.VOLTS
Fig.5 Typical Junction Capacitance
T
J
=25
°C
1.0
ES1AW~ES1DW
0.1
ES1EW/ES1GW
ES1JW
10
0.01
T
J
=25
°C
f = 1.0MHz
V
sig
= 50mV
p-p
0.001
0
0.5
1.0
1.5
2.0
2.5
1
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
35
30
25
20
15
10
05
00
1
8.3 ms Single Half Sine Wave
(JEDEC Method)
Reverse Voltage (V)
10
100
Number of Cycles
2016.01
www.sdjingdao.com
Page 2 of 3
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