山东晶导微电子有限公司
Jingdao Microelectronics
The SMDJ series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lig htning and other transient voltage events.
PINNING
PIN
1
2
SMDJ Series
DESCRIPTION
Cathode
Anode
MECHANICAL DATA
• Case: SMC
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight:
0.22g / 0.0077oz
2
Unipolar
1
FEATURES
•
Halogen-Free
•
RoHS compliant
•
For surface mounted applications
in order to optimize board space
•
Low profile package
•
Built-in strain relief
•
Typical maximum temperature coefficient
ΔVBR
= 0.1% × VBR@25℃ ×
Δ
T
•
Glass passivated chip junction
•
3000W peak pulse power capability
at lOxlOOOUs waveform, repetition
rate {duty cycles):0.01 %
Bipolar
Simplified outline SMC and symbol
•
Fast response time:typically less
than l.Ops from OV to BV min
•
Excellent clamping capability
•
Low incremental surge resistance
•
Typical IR less than 2UA above 12V
•
High Temperature soldering
guaranteed: 260℃/40 seconds
at terminals
•
Plastic package has Under writers
Laborator y Flammability 94V-O
•
Matte Tin Lead-free Plated
Maximum Ratings and Thermal Characteristics
(TA=25℃
unless otherwise noted)
Parameter
Peak Pulse Power Dissipation at
T
A
=25
°C
by 10x1000 us waveform
(Fig.l)(Note l), (Note 2)
Power Dissipation on infinite heat sink at TA=50℃
Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 100A for Unidirectional only
Operating Junction and Storage Temperature Range
Symbol
P
PPM
P
M(AV)
I
FSM
V
F
T
j
T
STG
R
UJL
R
UJA
Value
3000
6.5
300
3.5
Unit
W
W
A
V
℃
℃/W
℃/W
-65 to 150
15
75
Typical Thermal Resistance Junction to Lead
Typical Thermal Resistance Junction to Ambient
Notes:
1. Non-repetitive current pulse . per Fig 3 and derated above Ta = 25
℃
per Fig. 2
2. Mounted on copper pad area of 0.31x0.31" (8.0 x 8.0mm) to each terminal
3. Measured on 8.3ms single half sine wave or eguivalent square wave for unidirectional
device only
，
duty cycle=4 per minute maximum
2017.01
SMC-TVS-SMDJ Series
-3000W
Page 1 of 4
山东晶导微电子有限公司
Jingdao Microelectronics
SMDJ Series
Fig.1 Peak Pulse Power Rating Curve
Fig.2 Forward Current Derating Curve
1000
Non-Repetive Pulse.Wavefom
Shown in Figure.3
T
A
=25
°C
PEAK PULSE POWER(P
PP
)OR CURRENT(I
PP
)
DERATINGIN PERCENTAGE%
P
PPM
,PEAK PULSE FORWARD ,kW
100
80
60
40
20
0
25
50
75
100
125
150
175
100
10
0.31x0.31" (80 x 80mm)
Copper pad Area
1.0
0.1
1
10
100
1000
10000
t
d
,PULSE WIDTH ,us
T
A
,AMBIENT TEMPERATURE,
°C
Fig.3 Pulse Waveform
120
t
f
=10usec
Fig.4 Typical Junction Capacitance
100000
T
A
=25
°C
Pulse Width (td) is Defined
as the Point where the Peak.
Current Decayst to 50% of Ipp
I ppm ,Peak Pulse Current (%)
100
80
Peak Value
I
ppm
10000
Bi-directional V= 0V
Cj
(pF)
1000
Uni-directional V=0V
Half Value-I
pp
/2
60
10/1000usec Waveform as Defined bye R.E.A.
100
Uni-directional @ VR
40
20
0
0
1.0
2.0
3.0
4.0
10
Bi-directional @ VR
1
1
10
100
1000
T,TIME,ms
V
BR
- Reverse Breakdown Voltage (V)
Fig.5 Steady State Power Derating Curve
I
FSM
,PEAK FORWARD SURGE CURRENT,
AMPERES
360
300
Fig.6 Maximum Non-Repetitive Peak
Forward Surge Current
P
M(AV)
Steady Sate Power
Dissipation (W)
6
5
4
3
2
1
0
25 50 75 100 125 150 175
TA - Ambient Temperature(ºC)
240
180
120
60
0
1
10
100
T
J
=T
Jmax
8.3ms Single Half Sinepwave
JEDEC Method
Number of Cycles at 60Hz
2017.01
www.sdjingdao.com
Page 3 of 4
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