山东晶导微电子股½有限公司
Jingdao Microelectronics co.LTD
FTB1S-20 THRU FTB10S-20
2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
FEATURES:
• Glass Passivated Chip Junction
• Reverse Voltage - 100 to 1000 V
• Forward Current - 2.0 A
• Fast reverse recovery time
• Designed for Surface Mount Application
MECHANICAL DATA
• Case: ABS/LBF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 88mg 0.0031oz
PINNING
PIN
1
2
3
4
DESCRIPTION
Input Pin（~）
Input Pin（~）
Output
Anode（+）
Output
Cathode（-）
3
4
1
2
ABS/LBF Package
Maximum Ratings and Electrical characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Parameter
Maximum Repetitive Peak Reverse Voltage
Symbols
FTB1S-20 FTB2S-20 FTB4S-20 FTB6S-20 FTB8S-20 FTB10S-20
Units
V
RRM
V
RMS
V
DC
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
Maximum RMS voltage
Maximum DC Blocking Voltage
Average Rectified Output Current
at T
c
= 115
°C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
Maximum Forward Voltage at 2.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
T
a
= 25
°C
T
a
=125
°C
I
O
2.0
A
I
FSM
50
A
V
F
1.3
5.0
200
30
50
350
-55 ~ +150
V
I
R
μA
Typical Junction Capacitance（Note1）
C
j
R
θJA
t
rr
T
j
, T
stg
pF
Typical Thermal Resistance（Note2）
°C/W
Maximum Reverse Recovery Time
（Note3）
Operating and Storage Temperature Range
ns
°C
Note: 1. Measured at 1 MHz and applied reverse voltage of 4 V D.C
2. Mounted on glass epoxy PC board with 4×1.5"
×
1.5"
（
3.81
×
3.81 cm
）copper
pad.
3 . Measured with I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A .
2016.01
ABS-F-FTB1S-20~FTB10S-20-2A1KV
Page 1 of 3
山东晶导微电子股½有限公司
Jingdao Microelectronics co.LTD
FTB1S-20 THRU FTB10S-20
Fig.1 Average Rectified Output Current
Derating Curve
2.5
2.0
Fig.2 Typical Reverse Characteristics
Instaneous Reverse Current（
μ
A）
100
T
J
=125
°C
10
Average Rectified Output Current (A)
1.5
1.0
0.5
Resistive or Inductive Load
1.0
T
J
=25
°C
0.1
00
20
40
60
80
100
120
140
0.0
25
50
75
100
125
150
175
CaseTemperature (°C)
percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Instaneous Forward
Characteristics
Instaneous Forward Current (A)
Junction Capacitance ( pF)
10
T
J
=25
°C
100
Fig.4 Typical Junction Capacitance
T
J
=25
°C
1.0
10
0.1
pulse with 300μs
1% duty cycle
0.01
0.0
0.5
1.0
1.5
2.0
2.5
1
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
60
50
40
30
20
10
00
1
10
100
8.3 ms Single Half Sine Wave
(JEDEC Method)
Number of Cycles
2016.01
www.sdjingdao.com
Page 2 of 3
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