山东晶导微电子有限公司
Jingdao Microelectronics
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V
Forward Current - 3.0A
Features
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 27mg / 0.00095oz
SS32F THRU SS320F
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
Top View
Marking Code: SS32 — SS320
Simplified outline SMAF and symbol
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols
SS32F
SS34F
SS34AF SS36F
SS38F
SS310F SS312F SS315F
SS320F
Units
Maximum Repetitive Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
40
28
40
45
31.5
45
60
42
60
80
56
80
3.0
100
70
100
120
84
120
150
105
150
200
140
200
V
V
V
A
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
I
FSM
80
A
Max Instantaneous Forward Voltage at 3 A
V
F
0.55
0.5
5
250
0.70
0.85
0.3
3
180
70
18
-55 ~ +125
-55 ~ +150
0.95
V
Maximum DC Reverse Current T
a
= 25°C
at Rated DC Reverse Voltage
Typical Junction Capacitance
（1）
T
a
=100°C
I
R
C
j
R
θJA
R
θJC
mA
pF
Typical Thermal Resistance
（2）
°C/W
Operating Junction Temperature Range
T
j
T
stg
°C
°C
Storage Temperature Range
（1）
Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2016.10
SMAF-S-SS32F~SS320F-3A200V
Page 1 of 3
山东晶导微电子有限公司
Jingdao Microelectronics
SS32F THRU SS320F
Fig.1 Forward Current Derating Curve
Instaneous Reverse Current (
μA)
3.5
3.0
2.4
1.8
1.2
0.6
Single phase half-wave 60 Hz
resistive or inductive load
Fig.2 Typical Reverse Characteristics
10
4
T
J
=100
°C
Average Forward Current (A)
10
3
10
2
T
J
=75
°C
SS32F/SS36F
SS38F-SS320F
10
1
T
J
=25
°C
0.0
25
50
75
100
125
150
10
0
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage（%）
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Fig.4 Typical Junction Capacitance
20
10
T
J
=25
°C
Junction Capacitance ( pF)
1000
500
200
100
1.0
SS32F/SS34F
SS34AF/SS38F
SS310F/SS312F
SS315F/SS320F
20
10
0.1
1
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
SS32F~SS38F
SS32F~SS36F
SS310F~SS320F
SS38F~SS320F
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
100
SS32F-SS38F
SS310F-SS320F
Transient Thermal Impedance（
°C
/W）
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
Fig.5- Typical Transient Thermal Impedance
100
80
60
10
40
20
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
1
0.01
0.1
1
10
100
Number of Cycles at 60Hz
t, Pulse Duration（sec）
2016.10
www.sdjingdao.com
Page 2 of 3
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
