山东晶导微电子有限公司
Jingdao Microelectronics
MB1F-12 THRU MB10F-12
1.2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
FEATURES:
Glass Passivated Chip Junction
Reverse Voltage - 100 to 1000 V
Forward Current - 1.2A
High Surge Current Capability
Designed for Surface Mount Application
MECHANICAL DATA
• Case: MBF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 75mg 0.0026oz
PINNING
PIN
1
2
3
4
DESCRIPTION
Input Pin（~）
Input Pin（~）
Output
Anode（+）
Output
Cathode（-）
3
4
1
2
MBF Package
Maximum Ratings and Electrical characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Parameter
Maximum Repetitive Peak Reverse Voltage
Symbols
V
RRM
V
RMS
V
DC
MB1F-12
MB2F-12
MB4F-12
MB6F-12
MB8F-12
MB10F-12
Units
V
V
V
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
Maximum RMS voltage
Maximum DC Blocking Voltage
Average Rectified Output Current
at T
c
= 125
°C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
Maximum Forward Voltage at 1.2 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@
T
A
=25
°C
@
T
A
=125
°C
I
O
1.2
A
I
FSM
40
A
V
F
1.1
5
80
18
75
22
-55 ~ +150
V
I
R
μA
Typical Junction Capacitance（Note1）
C
j
R
θJA
R
θJC
T
j
, T
stg
pF
Typical Thermal Resistance（Note2）
°C/W
Operating and Storage Temperature Range
°C
Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C.
2. Mounted on glass epoxy PC board with 4×1.5"
×
1.5"
（
3.81
×
3.81 cm
）copper
pad.
2016.01
MBF-A-MB1F-12~MB10F-12-1.2A1KV
Page 1 of 3
山东晶导微电子有限公司
Jingdao Microelectronics
MB1F-12 THRU MB10F-12
Fig.1 Average Rectified Output Current
Derating Curve
Average Rectified Output Current (A)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Resistive or Inductive Load
Fig.2 Typical Reverse Characteristics
Instaneous Reverse Current（
μ
A）
100
T
J
=125
°C
10
1.0
T
J
=25
°C
0.1
00
20
40
60
80
100
120
140
0.0
25
50
75
100
125
150
175
Case Temperature (°C)
percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Instaneous Forward
Characteristics
Instaneous Forward Current (A)
Junction Capacitance ( pF)
10
T
J
=25
°C
100
Fig.4 Typical Junction Capacitance
T
J
=25
°C
1.0
10
0.1
pulse with 300μs
1% duty cycle
0.01
0.0
0.5
1.0
1.5
2.0
1
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
50
40
30
20
10
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
Number of Cycles
2016.01
www.sdjingdao.com
Page 2 of 3
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