山东晶导微电子股½有限公司
Jingdao Microelectronics co.LTD
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200V
Forward Current - 8.0A
FEATURES
•
Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
SS82C THRU SS820C
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
MECHANICAL DATA
• Case: SMC
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight:
0.22g / 0.0077oz
Top View
Marking Code: SS82 ~ SS820
Simplified outline SMC and symbol
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols
SS82C
SS84C
SS86C
SS88C
SS810C
SS812C
SS815C
SS820C
Units
Maximum Repetitive Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
40
28
40
60
42
60
80
56
80
8.0
100
70
100
120
84
120
150
105
150
200
140
200
V
V
V
A
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
I
FSM
150
A
Max Instantaneous Forward Voltage at 8 A
V
F
0.45
0.55
0.70
1.0
50
0.85
V
Maximum DC Reverse Current
at Rated DC Reverse Voltage
T
a
= 25°C
T
a
=100°C
I
R
mA
Typical Junction Capacitance
（1）
C
j
R
θJA
T
j
T
stg
600
35
-55 ~ +150
-55 ~ +150
400
pF
°C/W
°C
°C
Typical Thermal Resistance
（2）
Operating Junction Temperature Range
Storage Temperature Range
（1）
Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2017.01
SMC-S-SS82C~SS820C-8A200V
Page 1 of 3
山东晶导微电子股½有限公司
Jingdao Microelectronics co.LTD
SS82C THRU SS820C
Fig.1 Forward Current Derating Curve
Instaneous Reverse Current (
μA)
9.6
10
4
Fig.2 Typical Reverse Characteristics
Average Forward Current (A)
8.0
6.4
4.8
3.2
1.6
0.0
25
50
75
100
125
150
T
J
=100
°C
10
3
10
2
T
J
=75
°C
10
1
T
J
=25
°C
10
0
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage（%）
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Fig.4 Typical Junction Capacitance
20
10
T
J
=25
°C
Junction Capacitance ( pF)
1000
500
1
SS82C
SS84C
SS86C/SS88C
SS810C/SS820C
100
SS82C/SS84C
20
10
0.1
SS54F/SS520F
SS86C~SS820C
0.1
0
0.5
1.0
1.5
2.0
1
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
180
175
150
125
100
75
50
25
00
1
10
100
8.3 ms Single Half Sine Wave
(JEDEC Method)
Transient Thermal Impedance（
°C
/W）
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
Fig.6- Typical Transient Thermal Impedance
100
10
1
0.01
0.1
1
10
100
Number of Cycles at 60Hz
t, Pulse Duration（sec）
2017.01
www.sdjingdao.com
Page 2 of 3
stm32/stm8
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