山东晶导微电子有限公司
Jingdao Microelectronics
Surface Mount Zener Diodes
BZT52C2V0 THRU BZT52C39
PINNING
FEATURES
• Total power dissipation: Max. 500mW.
• Wide zener reverse voltage range 2.0 V to 39V.
• Small plastic package suitable for surface mounted design.
PIN
1
2
DESCRIPTION
Cathode
Anode
2
MECHANICAL DATA
▪Case:
SOD-123
▪Terminals:
Solderable per MIL-STD-750, Method 2026
▪
Approx. Weight:16mg 0.00056oz
1
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings And Characteristics
（
Ta = 25
°C）
Parameter
Power Dissipation
Forward Voltage at I
F
= 10 mA
Typical thermal resistance juncting to ambient
Operating and Storage Temperature Range
(1)
Symbol
P
D
V
F
R
θJA
T
j
, T
stg
Value
500
0.9
305
-55 ~ +150
Unit
mW
V
°C/W
°C
(1) Thermal resistance from junction to ambient at P.C.B. mounted with 7.6mm X 9.4mm X 0.87mm copper areas pads.
Transient Thermal Impedance（
°C
/W）
Fig.1 Maximum Continuous Power Derating
0.6
0.5
Fig.2 Typical Transient Thermal Impedance
2000
1000
Power Dissipation (
W
)
0.4
0.3
0.2
0.1
0.0
25
50
75
100
125
150
175
100
10
0.01
0.1
1
10
100
T
c
,Case Temperature (
°C)
t, Pulse Duration（sec）
2017.08
SOD123-W-BZT52C2V0~BZT52C39-500mW
Page 1 of 3
山东晶导微电子有限公司
Jingdao Microelectronics
Characteristics at Ta = 25°C
Zener Voltage Range
（2）
BZT52C2V0 THRU BZT52C39
Maximum Zener (3)
Impedance
Reverse Current
I
ZK
(mA)
I
R
μA
150
50
20
10
5.0
5.0
3.0
3.0
3.0
2.0
1.0
3.0
2.0
1.0
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
@V
R
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
(2)
Type
Marking
V
ZT
（at
I
ZT
）
I
ZT
Z
ZT
@I
ZT
Z
ZK
@I
ZK
Typical temperature
coefficient
@I
ZTC
mV/°C
Test
current
I
ZTC
Min（V） Nom（V） Max（V） (mA)
BZT52C2V0
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
BZT52C4V7
BZT52C5V1
BZT52C5V6
BZT52C6V2
BZT52C6V8
BZT52C7V5
BZT52C8V2
BZT52C9V1
BZT52C10
BZT52C11
BZT52C12
BZT52C13
BZT52C15
BZT52C16
BZT52C18
BZT52C20
BZT52C22
BZT52C24
BZT52C27
BZT52C30
BZT52C33
BZT52C36
BZT52C39
(Ω)
100
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
600
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
MIN
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
MAX
0
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
25.3
29.4
33.4
37.4
41.2
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
WY
WX
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WJ
WK
WL
WM
WN
WO
WP
WQ
WR
WS
WT
1.91
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
2.0
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
2.09
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
11
1
1
0.5
0.5
0.5
0.5
0.5
NOTES:（1）f=1KHz
（2）Short
duration test pulse used to minimize self-heating effect.
2017.08
www.sdjingdao.com
Page 2 of 3
详细参数
全文预览
综合技术交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
